STPS40SM80CR

April 2011 Doc ID 018719 Rev 1 1/11
11
STPS40SM80C
Power Schottky rectifier
Features
High junction temperature capability
Optimized trade-off between leakage current
and forward voltage drop
Low leakage current
Avalanche capability specified
Insulated package TO-220FPAB
insulated voltage: 2000 V
package capacitance: 45 pF
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I
2
PAK, D
2
PAK and TO-
220FPAB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.
Figure 1. Electrical characteristics
(a)
Table 1. Device summary
Symbol Value
I
F(AV)
2 x 20 A
V
RRM
80 V
T
j
(max) 175 °C
V
F
(typ) 520 mV
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in Figure 13. V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics
A1
K
A2
A1
A2
K
A1
A2
K
K
A1
A2
K
K
TO-220AB
STPS40SM80CT
TO-220FPAB
STPS40SM80CFP
I
2
PAK
STPS40SM80CR
D
2
PAK
STPS40SM80CG-TR
A1
A2
K
I
F
2 x I
O
I
O
I
R
I
AR
V
F(I
o
)
V
To
V
F(2xI
o
)
V
F
V
I
I
V
V
R
V
RRM
"Reverse"
"Forward"
V
AR
X
X
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Characteristics STPS40SM80C
2/11 Doc ID 018719 Rev 1
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode, at T
amb
= 25 °C unless
otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 80 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current,
δ = 0.5
TO-220AB,
I
2
PAK, D
2
PA K
T
c
= 145 °C
T
c
= 145 °C
Per diode
Per device
20
40
A
TO-220FPAB T
c
= 90 °C Per diode 20
I
FSM
Surge non repetitive
forward current
t
p
= 10 ms sinusoidal T
c
= 25 °C 200 A
P
ARM
(1)
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
Repetitive peak avalanche power T
j
= 25 °C, t
p
= 1 µs 9500 W
V
ARM
(2)
2. See Figure 13
Maximum repetitive peak
avalanche voltage
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 28.5 A 100 V
V
ASM
(2)
Maximum single pulse
peak avalanche voltage
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 28.5 A 100 V
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(3)
3. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB
I
2
PA K , D
2
PA K
per diode 1.60
°C/W
total 0.88
TO-220FPAB
per diode 4.90
total 4.00
R
th(c)
Coupling
TO-220AB
I
2
PA K , D
2
PA K
0.15
°C/W
TO-220FPAB 3.10
dPtot
dTj
<
1
Rth(j-a)
STPS40SM80C Characteristics
Doc ID 018719 Rev 1 3/11
To evaluate the conduction losses use the following equation:
P = 0.53 x I
F(AV)
+ 0.008 x I
F
2
(RMS)
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-1550µA
T
j
= 125 °C - 10 30 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
- 0.590 0.655
V
T
j
= 125 °C - 0.520 0.560
T
j
= 25 °C
I
F
= 20 A
- 0.720 0.800
T
j
= 125 °C - 0.605 0.690
T
j
= 25 °C
I
F
= 40 A
- 0.875 0.985
T
j
= 125 °C - 0.725 0.850
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20 22 24 26
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ = t / T
p
t
p
I (A)
F(AV)
P (W)
F(AV)
0
2
4
6
8
10
12
14
16
18
20
22
24
0 25 50 75 100 125 150 175
I (A)
F(AV)
R
th(j-a)
= R
th(j-c)
TO-220AB / I PAK / D PAK
22
TO-220FPAB
T (°C)
amb
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.10.01 1
0.1
10 100
1000
1
P(t
p
)
P (1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125
150
P(T)
P (25 °C)
ARM j
ARM
T (°C)
j

STPS40SM80CR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Dual Schottky 80V 475mV Vf High Temp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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