CS45-08IO1 Datasheet CS45-12IO1, CS45-16IO1R, CS45-08IO1 | P1-P3

1 - 3

Symbol Conditions Maximum Ratings

I

T(RMS)

T

VJ

= T

VJM

75 A

I

T(AV)M

T

C

= 75°C; 180° sine 48 A

I

TSM

T

VJ

= 45°C t = 10 ms (50 Hz), sine 520 A

V

R

= 0 V t = 8.3 ms (60 Hz), sine 560 A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 460 A

V

R

= 0 V t = 8.3 ms (60 Hz), sine 500 A

I

2

t T

VJ

= 45°C t = 10 ms (50 Hz), sine 1350 A

2

s

V

R

= 0 V t = 8.3 ms (60 Hz), sine 1300 A

2

s

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 1050 A

2

s

V

R

= 0 V t = 8.3 ms (60 Hz), sine 1030 A

2

s

(di/dt)

cr

T

VJ

= T

VJM

repetitive, I

T

= 40 A 150 A/µs

f = 50 Hz, t

P

= 200 µs

V

D

=

2

/

3

V

DRM

I

G

= 0.3 A non repetitive, I

T

= I

T(AV)M

500 A/µs

di

G

/dt = 0.3 A/µs

(dv/dt)

cr

T

VJ

= T

VJM

;V

DR

=

2

/

3

V

DRM

1000 V/µs

R

GK

= ¥; method 1 (linear voltage rise)

P

GM

T

VJ

= T

VJM

t

P

= 30 µs 10 W

I

T

= I

T(AV)M

t

P

= 300 µs 5 W

P

G(AV)

0.5 W

V

RGM

10 V

T

VJ

-40...+140 °C

T

VJM

140 °C

T

stg

-40...+125 °C

M

d

Version io1: mounting torque M3 0.8...1.2 Nm

F

C

Version io1R: mounting force with clip 20...120 N

V

ISOL

* 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~

Weight 6g

*

Verson io1R only

CS 45

Features

• Thyristor for line frequency

• International standard package

JEDEC TO-247

• Planar passivated chip

• Long-term stability of blocking

currents and voltages

• Version AR isolated and

UL registered E153432

●

Epoxy meets UL 94V-0

Applications

• Motor control

• Power converter

• AC power controller

• Switch-mode and resonant mode

power supplies

• Light and temperature control

Advantages

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Space and weight savings

• Simple mounting

• Improved temperature and power

cycling

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

Phase Control Thyristor

V

RSM

V

RRM

Type

V

DSM

V

DRM

VV

900 800 CS 45-08io1

1300 1200 CS 45-12io1

1700 1600 CS 45-16io1 CS 45-16io1R

030

A

C

G

C = Cathode, A = Anode, G = Gate

TO-247 AD ISOPLUS 247

TM

Version io1 Version io1R

G

C

A (TAB)

A

G

C

A

Isolated

back surface

*

* Patent pending

V

RRM

= 800-1600 V

I

T(RMS)

= 75 A

I

T(AV)M

= 48 A

2 - 3

CS 45

10 100 1000

1

10

100

1000

µs

t

gd

I

G

1 10 100 1000 10000

0.1

1

10

I

G

V

G

mA

V

4

2

1

5

6

mA

typ.

Limit

3

Symbol Conditions Characteristic Values

I

R

, I

D

T

VJ

= T

VJM

; V

R

= V

RRM

; V

D

= V

DRM

£ 5mA

V

T

I

T

= 80 A; T

VJ

= 25°C £ 1.64 V

V

T0

For power-loss calculations only (T

VJ

= 125°C) 0.85 V

r

T

11 mW

V

GT

V

D

= 6 V; T

VJ

= 25°C £ 1.5 V

T

VJ

= -40°C £ 1.6 V

I

GT

V

D

= 6 V; T

VJ

= 25°C £ 100 mA

T

VJ

= -40°C £ 200 mA

V

GD

T

VJ

= T

VJM

;V

D

=

2

/

3

V

DRM

£ 0.2 V

I

GD

£ 10 mA

I

L

T

VJ

= 25°C; t

P

= 10 ms £ 150 mA

I

G

= 0.3 A; di

G

/dt = 0.3 A/µs

I

H

T

VJ

= 25°C; V

D

= 6 V; R

GK

= ¥ £ 100 mA

t

gd

T

VJ

= 25°C; V

D

= ½ V

DRM

£ 2µs

I

G

= 0.3 A; di

G

/dt = 0.3 A/µs

R

thJC

DC current 0.62 K/W

R

thJH

DC current 0.82 K/W

a Max. acceleration, 50 Hz 50 m/s

2

Fig. 1 Gate trigger range

Fig. 2 Gate controlled delay time t

gd

T

VJ

= 25°C

I

GD

, T

VJ

=125°C

4: P

GAV

= 0.5 W

5: P

GM

= 5 W

6: P

GM

= 10 W

1: I

GT

, T

VJ

= 125°C

2: I

GT

, T

VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

TO-247 AD and ISOPLUS 247

TM

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D* 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

* ISOPLUS 247

TM

without hole

3 - 3

CS 45

0 20 40 60 80 100 120

0

10

20

30

40

50

60

70

80

I

T(AV)M

0 10203040506070

0

20

40

60

80

100

120

140

0 25 50 75 100 125 150

0.001 0.01 0.1 1

0

100

200

300

400

0.0 0.5 1.0 1.5 2.0

0

20

40

60

80

100

0.001 0.01 0.1 1 10 100

0.0

0.5

1.0

I

TSM

I

T

A

V

T

t

s

P

T

W

I

T(AV)M

A

T

amb

°C

t

s

Z

thJC

K/W

V

A

12345678910

1000

I

2

t

A

2

s

T

case

A

°C

ms

500

2000

Fig. 8 Transient thermal impedance junction to case

Fig. 3 Forward characteristics

Fig. 4 Surge overload current

I

TSM

: crest value, t: duration

Fig. 5 I

2

t versus time (1-10 ms)

Fig. 6 Power dissipation versus forward current and ambient temperature

Fig. 7 Max. forward current at case

temperature

T

VJ

= 125°C

T

VJ

= 45°C

50Hz, 80%V

RRM

T

VJ

= 125°C

DC

180° sin

120°

60°

30°

R

thKA

:

0.1 K/W

0.5 K/W

1 K/W

2 K/W

4 K/W

10 K/W

T

VJ

= 45°C

DC

180° sin

120°

60°

30°

60°

120°

180°

DC

V

R

= 0 V

T

VJ

= 25°C

T

VJ

= 125°C

R

thJC

for various conduction angles d:

dR

thJC

(K/W)

DC 0.62

180° 0.71

120° 0.748

60° 0.793

30° 0.817

Constants for Z

thJC

calculation:

iR

thi

(K/W) t

i

(s)

1 0.206 0.013

2 0.362 0.118

3 0.052 1.488

CS45-08IO1

CS45-08IO1

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