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VS-APH3006L-M3

P1-P3P4-P6P7-P8
VS-APH3006L-M3, VS-EPH3006L-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
4
Document Number: 95709
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (°C)
0 10 20 30 40 50
80
90
100
110
120
130
140
150
160
170
180
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
0 5 10 15 20 25 30 35 40 45
0
20
40
60
80
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
t
rr
(ns)
dI
F
/dt (A/μs)
I
F
= 30 A, 125 °C
I
F
= 30 A, 25 °C
typical value
10
20
30
40
50
60
70
80
90
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
I
F
= 30 A, 125 °C
I
F
= 30 A, 25 °C
typical value
10
0
200
300
400
500
600
700
800
900
100 1000
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-APH3006L-M3, VS-EPH3006L-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
5
Document Number: 95709
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-APH3006L-M3 30 300 Antistatic plastic tube
VS-EPH3006L-M3 30 300 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247 3-pins LL www.vishay.com/doc?95599
TO-247 2-pins LL www.vishay.com/doc?95598
Part marking information
TO-247 3-pins LL www.vishay.com/doc?95593
TO-247 2-pins LL www.vishay.com/doc?95592
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 08-Apr-14
1
Document Number: 95598
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-247 2 Pin Long Lead
DIMENSIONS in millimeters
SYMBOL
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
MIN. MAX. MIN. MAX.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b 1.000 1.400 0.039 0.055
b1 1.800 2.200 0.071 0.087
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 Ref. 0.138 Ref.
E2 3.600 Ref. 0.142 Ref.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
Ø 7.100 7.300 0.280 0.287
e 10.900 Typ. 0.429 Typ.
H 5.980 Typ. 0.235 Typ.
h 0.000 0.300 0.000 0.012
Ejector pin hole thickness (h)
D
c1
A
A1
b1
b
e
c
L
H
L2
E1
E2
L1
Ø
P1-P3P4-P6P7-P8

VS-APH3006L-M3

Mfr. #:
Buy VS-APH3006L-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Freds - TO-247-e3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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