BT151-650L_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 3 of 11
NXP Semiconductors
BT151-650L
SCR, 12 A, 5 mA, 650 V, SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
-650V
V
RRM
repetitive peak reverse
voltage
-650V
I
T(AV)
average on-state
current
half sine wave; T
mb
≤ 109 °C; see Figure 3 -7.5A
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 109 °C; see Figure 1; see
Figure 2
-12A
dI
T
/dt rate of rise of on-state
current
I
T
=20A; I
G
=50mA; dI
G
/dt = 50 mA/µs - 50 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
I
TSM
non-repetitive peak
on-state current
half sine wave; t
p
= 8.3 ms; T
j(init)
=25°C - 132 A
half sine wave; t
p
= 10 ms; T
j(init)
=25°C; see
Figure 4; see Figure 5
-120A
I
2
t I2t for fusing t
p
= 10 ms; sine-wave pulse - 72 A
2
s
P
G(AV)
average gate power over any 20 ms period - 0.5 W
V
RGM
peak reverse gate
voltage
-5V
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
surge duration (s)
10
−2
10110
−1
001aaa954
10
15
5
20
25
I
T(RMS)
(A)
0
T
mb
(°C)
−50 150100050
001aaa999
8
4
12
16
I
T(RMS)
(A)
0
