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BAV 99 E6433
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
2007-09-19
1
BAV99...
Silicon Switching Diode
•
For high-speed switching applications
•
Series pair configuration
•
BAV99S / U: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAV99
BAV99W
BAV99S
BAV99U
!
,
,
,
!
"
#
$
,
,
!
,
"
Type
Package
Configuration
Marking
BAV99
BAV99S
BAV99U
BAV99W
SOT23
SOT363
SC74
SOT323
series
dual series
dual series
series
A7s
A7s
A7s
A7s
1
Pb-containing package may be available upon special request
2007-09-19
2
BAV99...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Non-repetitive peak surge forward current
t
= 1 µs
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
I
FSM
4.5
1
0.5
0.75
A
Total power dissipation
BAV99,
T
S
≤
28°C
BAV99S,
T
S
≤
85°C
BAV99U,
T
S
≤
113°C
BAV99W,
T
S
≤
110°C
P
tot
330
250
250
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
st
g
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAV99
BAV99S
BAV99U
BAV99W
R
thJS
≤
360
≤
260
≤
150
≤
160
K/W
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-09-19
3
BAV99...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
85
-
-
V
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
I
R
-
-
-
-
-
-
0.15
30
50
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
-
-
1.5
pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Ω
t
rr
-
-
4
ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50
Ω
Oscillograph:
R
= 50,
t
r
= 0.35ns
C
≤
1pF
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BAV 99 E6433
Mfr. #:
Buy BAV 99 E6433
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Silicon Switch Diode FOR HI-SPEED
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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