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SI1926DL-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Si1926DL
www.vishay.com
Vishay Siliconix
S14-1565-Rev. F, 04-Aug-14
4
Document Number: 73684
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
Safe Operating Area
1
10
100
1000
0.0 0.3 0.6 0.9 1.2 1.5
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC
ecruoS -
I
S
T
A
= 150 °C
T
A
= 25 °C
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V (V)
)ht(SG
T
J
- Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
345678910
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
R
)no(SD
(Ω
e
cnatsiseR-nO -)
I
D
= 0.5 A
0
3
5
1
2
)
W( rewoP
Time (s)
4
11006001010
-1
10
-2
10
-3
)A( tnerruC
n
iarD -
I
D
10 s
T
A
= 25 °C
Single Pulse
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
0.001
0.01
0.1
1
0.1
1
10 100
Limited by R *
DS(on)
1 s
100 ms
10 ms
BVDSS Limited
Si1926DL
www.vishay.com
Vishay Siliconix
S14-1565-Rev. F, 04-Aug-14
5
Document Number: 73684
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.0
0.1
0.2
0.3
0.4
0.5
0 255075100125150
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
0.0
0.1
0.2
0.3
0.4
0.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
)
W(
n
oi
t
a
p
is
si
D
r
e
woP
Si1926DL
www.vishay.com
Vishay Siliconix
S14-1565-Rev. F, 04-Aug-14
6
Document Number: 73684
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73684
.
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT ev
i
tceffE dezila
mroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 400 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
P1-P3P4-P6P7-P9P10-P11

SI1926DL-T1-GE3

Mfr. #:
Buy SI1926DL-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs SC70-6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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