NXP Semiconductors
BAP64LX
Silicon PIN diode
BAP64LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 6.0 — 4 July 2018
5 / 10
Symbol Parameter Conditions Min Typ Max Unit
L
S
series inductance I
F
= 100 mA; f = 100 MHz - 0.4 - nH
7.1 Graphics
001aag637
V
R
(V)
0 20168 124
200
300
100
400
500
C
d
(fF)
0
f = 1 MHz; T
j
= 25 °C.
Figure 2. Diode capacitance as a function of reverse
voltage; typical values
001aag638
I
F
(mA)
10
- 1
10
2
101
10
1
10
2
r
D
(Ω)
10
- 1
f = 100 MHz; T
j
= 25 °C.
Figure 3. Forward resistance as a function of forward
current; typical values
001aag639
f (MHz)
500 300025001500 20001000
- 20
- 10
0
ISL
(dB)
- 30
T
amb
= 25 °C
Diode zero biased and inserted in series with a 50 Ω
stripline circuit
Figure 4. Isolation of the diode as a function of
frequency; typical values
001aag640
f (MHz)
500 300025001500 20001000
-1.5
-1.0
-2.0
-0.5
0
L
ins
(dB)
-2.5
(1)
(2)
(3)
(4)
T
amb
= 25 °C
1. I
F
= 100 mA
2. I
F
= 10 mA
3. I
F
= 1 mA
4. I
F
= 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network
Figure 5. >Insertion loss of the diode as a function of
frequency; typical values
