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IRF9610

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91080
4 S09-0046-Rev. A, 19-Jan-09
IRF9610, SiHF9610
Vishay Siliconix
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Breakdown Voltage vs. Temperature
Fig. 9 - Normalized On-Resistance vs. Temperature
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
2.0
g
fs
,Transconductance (S)
I
D
,
Drain Current (A)
- 0.48 - 0.96 - 1.44 - 1.92 - 2.40
0
T
J
= 25
°
C
T
J
= - 55
°
C
91080_06
T
J
= 125
°
C
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
1.6
1.2
0.8
0.4
0.0
T
J
= 25 °C
T
J
= 150 °C
- 10.0
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
- 2.0
- 6.8
- 5.6- 4.4- 3.2
91080_07
- 0.1
- 0.2
- 0.5
- 1.0
- 2.0
- 5.0
- 8.0
91080_08
T
J
, Junction Temperature (°C)
BV
DSS
, Drain-to-Source Breakdown
1.25
Voltage (Normalized)
1.15
0.75
0.85
0.95
1.05
- 40
160
120
80400
91080_09
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
2.5
(Normalized)
2.0
0.0
0.5
1.0
1.5
- 40
160
12080400
I
D
= - 0.6 A
V
GS
= - 10 V
91080_10
V
DS
, Drain-to-Source Voltage (V)
C, Capacitance (pF)
500
0
100
200
300
400
0 - 50- 40- 30- 20
- 10
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+
C
gs
, C
gd
C
gs
+ C
gd
≈ C
gs
+ C
gd
Q
G
, Total Gate Charge (nC)
Negative V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
02
86
4
V
DS
= - 40 V
V
DS
= - 60 V
For test circuit
see figure 18
V
DS
= - 100 V
91080_11
I
D
= - 1.8 A
Document Number: 91080 www.vishay.com
S09-0046-Rev. A, 19-Jan-09 5
IRF9610, SiHF9610
Vishay Siliconix
Fig. 12 - Typical On-Resistance vs. Drain Current Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 14 - Power vs. Temperature Derating Curve
Fig. 15 - Clamped Inductive Test Circult Fig. 16 - Clamped Inductive Waveforms
91080_12
I
D
, Drain Current (A)
R
DS(on)
, Drain-to-Source
7
R
DS(on)
measured with current pulse of
2.0 µs duration. Initial T
J
= 25 °C.
(Heating effect of 2.0 µs pulse is minimal.)
6
0
1
2
3
4
5
0
- 7
- 6
- 1
- 2 - 3 - 4
- 5
On Resistance (Ω)
V
GS
= - 10 V
V
GS
= - 20 V
150
Negative I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
0.4
0.8
1.2
1.6
2.0
25
91080_13
1251007550
T
C
, Case Temperature (°C)
P
D
, Power Dissipation (W)
20
15
10
0
5
0 20 100806040
91080_14
140
120
0.05 Ω
D.U.T.
L
V
DS
+
-
V
DD
V
GS
= - 10 V
Vary t
p
to obtain
required I
L
t
p
V
DD
= 0.5 V
DS
E
C
= 0.75 V
DS
E
C
I
L
V
DD
V
DS
t
p
E
C
I
L
www.vishay.com Document Number: 91080
6 S09-0046-Rev. A, 19-Jan-09
IRF9610, SiHF9610
Vishay Siliconix
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
Fig. 18a - Basic Gate Charge Waveform
Fig. 18b - Gate Charge Test Circuit
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
Q
GS
Q
GD
Q
G
V
G
Charge
15 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRF9610

Mfr. #:
Buy IRF9610
Manufacturer:
Vishay
Description:
MOSFET P-CH 200V 1.8A TO-220AB
Lifecycle:
New from this manufacturer.
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