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MMBT5401LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 1994
December, 2017 − Rev. 14
1 Publication Order Number:
MMBT5401LT1/D
MMBT5401L, SMMBT5401L,
NSVMMBT5401L
High Voltage Transistor
PNP Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−150 Vdc
Collector−Base Voltage V
CBO
−160 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−500 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate Above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
Device
Package
Shipping
†
ORDERING INFORMATION
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
MMBT5401LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT5401LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2L M G
G
2L = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
SMMBT5401LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
NSVMMBT5401LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
www.onsemi.com
MMBT5401L, SMMBT5401L, NSVMMBT5401L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−150 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−160 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 −
Vdc
Collector−Base Cutoff Current
(V
CB
= −120 Vdc, I
E
= 0)
(V
CB
= −120 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
−
−
−50
−50
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −5.0 Vdc)
h
FE
50
60
50
−
240
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−0.2
−0.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−
−
−1.0
−1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −10 Vdc, f = 100 MHz)
f
T
100 300
MHz
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 6.0
pF
Small Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
h
fe
40 200
−
Noise Figure
(I
C
= −200 mAdc, V
CE
= −5.0 Vdc, R
S
= 10 W, f = 1.0 kHz)
NF
− 8.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MMBT5401L, SMMBT5401L, NSVMMBT5401L
www.onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5 2.0 3.0 100.2 0.3
20
1.0 5.0
FE
T
J
= 125°C
25°C
-55°C
70
50
20 30 50 100
V
CE
= - 1.0 V
V
CE
= - 5.0 V
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut−Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (A)μI
C
10
3
0.10.3 0.2
10
2
10
1
10
0
10
-1
10
-2
10
-3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
I
C
= 1.0 mA 10 mA 30 mA 100 mA
V
CE
= 30 V
I
C
= I
CES
T
J
= 125°C
75°C
25°C
REVERSE FORWARD
P1-P3P4-P6

MMBT5401LT1G

Mfr. #:
Buy MMBT5401LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS HV XSTR PNP 150V
Lifecycle:
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