DMMT3906-7-F

DMMT3906
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Intrinsically
Matched PNP Pair (Note 1)
Small Surface Mount Package
2% h
FE
Matched Tolerance
Lead
Free/RoHS Compliant (Note 3)
"Gree
n" Device (Note 4 and 5)
Mechanical Data
Case: SOT-26
Case Material:
Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
Terminal Conn
ections: See Diagram
Terminals: Solderable per MI
L-STD-202, Method 208
Lead Fr
ee Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking Informat
ion: See Page 3
Orde
ring Information: See Page 3
Weight: 0.015 gr
ams (approximate)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
0.95
F
0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
All Dimens ons in mm i
A
M
J
L
FD
B
C
H
K
C
1
C
2
E
1
NC
E
2
B
1,2
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current - Continuous
I
C
-200 mA
Power Dissipation (Note 2)
P
d
225 mW
Thermal Resistance, Junction to Ambient (Note 2)
R
θ
JA
556
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30293 Rev. 6 - 2 1 of 4
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DMMT3906
© Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
V
I
E
= -10μA, I
C
= 0
Collector Cutoff Current
I
CEX
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current
I
BL
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain (Note 7)
h
FE
60
80
100
60
30
300
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.5 pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
10 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0 12
kΩ
Voltage Feedback Ratio
h
re
0.1 10 x 10
-4
Small Signal Current Gain
h
fe
100 400
Output Admittance
h
oe
3.0 60
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= -20V, I
C
= -10mA, f = 100MHz
Noise Figure NF
4.0 dB
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35 ns
Rise Time
t
r
35 ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Storage Time
t
s
225 ns
Fall Time
t
f
75 ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. The DC current gain, h
FE
, is matched at I
C
= -10mA and V
CE
= -1.0V with typical matched tolerances of 1% and maximum of 2%.
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature, Total Device
A
150
200
250
300
350
0
1
100
10
0.1
1
10
100
C
, I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
CB
DS30293 Rev. 6 - 2 2 of 4
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.diodes.com
DMMT3906
© Diodes Incorporated
1
10
1,000
100
0.1
1
10
1,000100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current
C
0.01
0.1
10
1
1
10
100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
0.5
0.6
0.7
0.8
0.9
1.0
110
V , BASE-EMI
100
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
C
I
I
C
B
= 10
Ordering Information (Note 5 & 8 )
Device Packaging Shipping
DMMT3906-7-F SOT-26 3000/Tape & Reel
Notes: 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3Q
YM
K3Q = Product Type Marking Code
YM = Date Code Marking
Y =Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year 2004 2005 2006 2007
2008 2009 2010 2011 2012
Code R S T U
V W X Y Z
Month Jan Feb Mar Apr May Jun Jul
Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7
8 9 O N D
DS30293 Rev. 6 - 2 3 of 4
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DMMT3906
© Diodes Incorporated

DMMT3906-7-F

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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