AON7422E
Symbol Min Typ Max Units
BV
DSS
30 36 V
V
DS
=30V, V
GS
=0V
1
T
J
=55°C
5
I
GSS
10 uA
V
GS(th)
Gate Threshold Voltage
1.3 1.85 2.4 V
I
D(ON)
200 A
3.5 4.3
T
J
=125°C
5.5 6.8
4.5 6
m
g
FS
85 S
V
SD
0.7 1 V
I
S
40 A
C
iss
1950 2445 2940 pF
C
oss
270 390 510 pF
C
rss
130 220 310 pF
R
g
1.2 2.4 3.6 Ω
Q
g
(10V)
32 41 50 nC
Q
g
(4.5V)
15 19 24 nC
Q
gs
7.2 nC
Q
gd
6.6 nC
t
D(on)
7ns
t
r
5ns
t
D(off)
41.5 ns
t
f
10.5 ns
t
rr 17.5 22 ns
Q
rr 31 40
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
I
F
=20A, dI/dt=500A/µs
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
=±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
On state drain current
V
GS
=4.5V, I
D
=16A
Forward Transconductance
Diode Forward Voltage
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0: Feb. 2011 www.aosmd.com Page 2 of 6
