ZXMN2A02N8
ISSUE 6 - FEBRUARY 2007
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20 V
I
D
=250μA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA
V
GS
=⫾12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7 V
I
D
=250A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.02
0.04
⍀
⍀
V
GS
=4.5V, I
D
=11A
V
GS
=2.5V, I
D
=8.4A
Forward Transconductance
(1)(3)
g
fs
27 S
V
DS
=10V,I
D
=11A
DYNAMIC
(3)
Input Capacitance C
iss
1900 pF
V
DS
=10V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
356 pF
Reverse Transfer Capacitance C
rss
218 pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
7.9 ns
V
DD
=10V, I
D
=1A
R
G
≅6.0Ω,V
GS
=4.5V
Rise Time t
r
10 ns
Turn-Off Delay Time t
d(off)
33.3 ns
Fall Time t
f
13.6 ns
Total Gate Charge Q
g
18.9 nC
V
DS
=10V,V
GS
=4.5V,
I
D
=11A
Gate-Source Charge Q
gs
5.2 nC
Gate-Drain Charge Q
gd
4.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95 V
T
J
=25°C, I
S
=11.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
16.3 ns
T
J
=25°C, I
F
=2.1A,
di/dt= 100A/μs
Reverse Recovery Charge
(3)
Q
rr
7.8 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width ⱕ300μs. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
