Data Sheet ADF41020
SPECIFICATIONS
DV
DD
= AV
DD
= V
P
= 3.0 V ± 5%, GND = 0 V, R
SET
= 5.1 kΩ, dBm referred to 50 Ω, T
A
= T
MAX
to T
MIN
, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
RF CHARACTERISTICS See Figure 1 for input circuit
RF Input Frequency (RF
IN
) 4.0 18.0 GHz
RF Input Sensitivity 10 +10 dBm
Maximum Allowable Prescaler
Output Frequency
1
350 MHz
REF
IN
CHARACTERISTICS
REF
IN
Input Frequency 10 400 MHz For f < 10 MHz, ensure slew rate > 50 V/μs
REF
IN
Input Sensitivity 0.8 DV
DD
V p-p Biased at DV
DD
/2 when input is ac-coupled
REF
IN
Input Capacitance 10 pF
REF
IN
Input Current ±100 µA
PHASE DETECTOR
Phase Detector Frequency
2
100 MHz
CHARGE PUMP Programmable, see Figure 17
I
CP
Sink/Source
High Value 5.0 mA With R
SET
= 5.1
Low Value 625 µA
Absolute Accuracy 3 % With R
SET
= 5.1
R
SET
5.1 5.1 5.1 See Figure 17
I
CP
Three-State Leakage 1 2 nA T
A
= 25°C
Sink and Source Current Matching 2 % 0.5 V ≤ V
CP
≤ V
P
0.5 V
I
CP
vs. V
CP
1 % 0.5 V ≤ V
CP
≤ V
P
0.5 V
I
CP
vs. Temperature 2 % V
CP
= V
P
/2
LOGIC INPUTS
V
IH
, Input High Voltage
1.4
V
The SPI interface is 1.8 V and 3 V logic compatible
V
IL
, Input Low Voltage 0.6 V
I
INH
, I
INL
, Input Current ±1 µA
C
IN
, Input Capacitance 10 pF
LOGIC OUTPUTS
V
OH
, Output High Voltage 1.4 V Open-drain output chosen, 1 kΩ pull-up resistor
to 1.8 V
V
OH
, Output High Voltage DV
DD
0.4 V CMOS output chosen
I
OH
, Output High Current
500
µA
V
OL
, Output Low Voltage 0.4 V
I
OL
, Output Low Current 500 µA
POWER SUPPLIES
AV
DD
2.85 3.15 V
DV
DD
2.85 3.15 V
V
P
2.85 3.15 V
I
DD
3
27 30 mA T
A
= 25°C
I
P
3
4.5 5 mA T
A
= 25°C
Power-Down Mode 1 µA T
A
= 25°C
Rev. C | Page 3 of 16
ADF41020 Data Sheet
Parameter Min Typ Max Unit Test Conditions/Comments
NOISE CHARACTERISTICS
Normalized Phase Noise Floor
4
221 dBc/Hz PLL loop bandwidth = 500 kHz
Normalized 1/f Noise
5
118 dBc/Hz Normalized to 10 kHz offset at 1 GHz
Phase Noise Performance
6
At VCO output
5.7 GHz
dBc/Hz
At 1 kHz offset and 2.5 MHz PFD frequency with
20 kHz loop bandwidth
12.5 GHz
7
−82 dBc/Hz At 3 kHz offset and 2.5 MHz PFD frequency with
20 kHz loop bandwidth
17.64 GHz 96 dBc/Hz At 100 kHz offset and 90 MHz PFD frequency with
700 kHz loop bandwidth
Spurious Signals
5.7 GHz 80/86 dBc At 2.5 MHz/5 MHz and 2.5 MHz PFD frequency
12.5 GHz
7
98/<110 dBc At 2.5 MHz/5 MHz and 2.5 MHz PFD frequency
17.64 GHz 109/113 dBc At 90 MHz/180 MHz and 90 MHz PFD frequency
1
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
2
Guaranteed by design. Sample tested to ensure compliance.
3
T
A
= 25°C; AV
DD
= DV
DD
= V
P
= 3.0 V; P = 16; f
REF
IN
= 100 MHz; f
PFD
= 100 MHz; RF
IN
= 12.8 GHz.
4
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value) and 10 log f
PFD
. PN
SYNTH
= PN
TOT
− 10 log f
PFD
− 20 log N.
5
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, fRF,
and at a frequency offset, f, is given by PN = PN
1_f + 10 log(10 kHz/f) + 20 log(fRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in
ADIsimPLL.
6
The phase noise is measured with a Rohde & Schwarz FSUP spectrum analyzer. The reference is provided by a Rohde & Schwarz SMA100A.
7
The phase noise and spurious noise is measured with the EV-ADF41020EB1Z evaluation board and the Rohde & Schwarz FSUP spectrum analyzer.
TIMING CHARACTERISTICS
AV
DD
= DV
DD
= V
P
= 3.0 V, G N D = 0 V, R
SET
= 5.1 kΩ, dBm referred to 50, T
A
= T
MAX
to T
MIN
, unless otherwise noted.
Table 2.
Parameter Limit Unit Test Conditions/Comments
t
1
10 ns min DATA to CLK setup time
t
2
10 ns min DATA to CLK hold time
t
3
25 ns min CLK high duration
t
4
25 ns min CLK low duration
t
5
10 ns min CLK to LE setup time
t
6
20 ns min LE pulse width
Figure 2. Timing Diagram
CLK
DB22
DB2
DATA
LE
t
1
LE
DB23 (MSB)
t
2
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
3
t
4
t
6
t
5
10304-002
Rev. C | Page 4 of 16
Data Sheet ADF41020
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
to GND 0.3 V to +3.9 V
AV
DD
to DV
DD
0.3 V to +0.3 V
V
P
to GND 0.3 V to +3.9 V
V
P
to AV
DD
0.3 V to +0.3 V
Digital I/O Voltage, REF
IN
to GND 0.3 V to DV
DD
+ 0.3 V
Analog I/O Voltage to GND 0.3 V to V
P
+ 0.3 V
REF
IN
, RF
IN
to GND
0.3 V to AV
DD
+ 0.3 V
Operating Temperature Range
Industrial 40°C to +85°C
Storage Temperature Range 65°C to +125°C
Maximum Junction Temperature 150°C
LFCSP θ
JA
Thermal Impedance
1
(Paddle Soldered)
62.82°C/W
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6610
Bipolar 358
ESD (Charged Device Model) 1500 V
ESD (Human Body Model) 4000 V
1
Two signal planes (that is, on the top and bottom surfaces of the board), two
buried planes, and four vias.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. C | Page 5 of 16

ADF41020BCPZ-RL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Phase Locked Loops - PLL 18 GHz Microwave Synthesizer
Lifecycle:
New from this manufacturer.
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