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BSZ050N03MSGATMA1
P1-P3
P4-P6
P7-P9
BSZ050N03MS G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
)
parameter:
V
GS
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0.01
0.1
1
10
0000001
t
p
[s]
Z
thJC
[K/W]
0
10
20
30
40
50
60
0
40
80
120
160
T
C
[°C]
P
tot
[W]
10 V
4.5 V
0
10
20
30
40
50
0
40
80
120
160
T
C
[°C]
I
D
[A]
Rev. 1.7
page 4
2009-11-05
BSZ050N03MS G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
6 V
10 V
0
2
4
6
8
10
0
1
02
03
04
05
0
I
D
[A]
R
DS(on)
[m
Ω
]
25 °C
150 °C
0
30
60
90
120
150
180
012345
V
GS
[V]
I
D
[A]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
30
60
90
120
150
180
0123
V
DS
[V]
I
D
[A]
0
40
80
120
160
0
40
80
120
160
I
D
[A]
g
fs
[S]
Rev. 1.7
page 5
2009-11-05
BSZ050N03MS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=20 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ
98 %
0
1
2
3
4
5
6
7
8
9
-60
-20
20
60
100
140
180
T
j
[°C]
R
DS(on)
[m
Ω
]
0
0.4
0.8
1.2
1.6
2
2.4
-60
-20
20
60
100
140
180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
100
1000
10000
01
0
2
0
3
0
V
DS
[V]
C
[pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
SD
[V]
I
F
[A]
Rev. 1.7
page 6
2009-11-05
P1-P3
P4-P6
P7-P9
BSZ050N03MSGATMA1
Mfr. #:
Buy BSZ050N03MSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LV POWER MOS
Lifecycle:
New from this manufacturer.
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BSZ050N03MSGATMA1