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VSMB2948SL

P1-P3P4-P6
VSMB2948SL
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 07-Feb-13
1
Document Number: 83498
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB2948SL is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology with
high radiant power and high speed, molded in clear,
untinted plastic package (with lens) for surface mounting
(SMD).
APPLICATIONS
• Remote control
• IR touch panels
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• Peak wavelength:
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2023SLX01 and
VEMT2023SLX01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
p
(nm) t
r
(ns)
VSMB2948SL 20 ± 25 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB2948SL Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Surge forward current t
p
= 100 μs I
FSM
500 mA
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature according figure 9, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
R
thJA
250 K/W
VSMB2948SL
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 07-Feb-13
2
Document Number: 83498
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.15 1.35 1.6 V
I
F
= 500 mA, t
p
= 100 μs V
F
1.8 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.5 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
21 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
10 20 30 mW/sr
I
F
= 500 mA, t
p
= 100 μs I
e
90 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
40 mW
Temperature coefficient of
radiant power
I
F
= 1 mA TK
e
- 1.1 %/K
Angle of half intensity ± 25 deg
Peak wavelength I
F
= 30 mA
p
920 940 960 nm
Spectral bandwidth I
F
= 30 mA  25 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
15 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
15 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
23 MHz
VSMB2948SL
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 07-Feb-13
3
Document Number: 83498
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
1
10
100
1000
0.5 0.7 1.7 1.9
t
p
= 100 µs
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
1.51.31.10.9
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
V
F, rel
- Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
0.1
10
100
1000
0.001 0.1 1
t
p
= 100 µs
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
1
0.01
40
60
80
100
120
140
160
180
- 60 - 40 - 20 0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
I
e rel
- Relative Radiant Intensity (%)
t
p
= 20 ms
I
F
= 1 mA
21444
I
F
= 100 mA
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
22690
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
P1-P3P4-P6

VSMB2948SL

Mfr. #:
Buy VSMB2948SL
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters - High Power 5volt 160mW 940nm 25Deg
Lifecycle:
New from this manufacturer.
Delivery:
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