Jantxv2N3741

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/441
T4-LDS-0021 Rev. 2 (100698) Page 1 of 3
DEVICES LEVELS
2N3740 2N3741 JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3740 2N3741 Unit
Collector-Emitter Voltage V
CEO
60 80 Vdc
Collector-Base Voltage V
CBO
60 80 Vdc
Emitter-Base Voltage V
EBO
7.0 Vdc
Base Current I
B
2.0 Adc
Collector Current I
C
4.0 Adc
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +100°C
P
T
25
14
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
Thermal Resistance, Junction-to-Case
R
θJC
7.0 °C/W
Note: (1) Derate linearly @ 143 mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc
2N3740
2N3741
V
(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 40Vdc
V
CE
= 60Vdc
2N3740
2N3741
I
CEO
10
10
µAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 1.5Vdc
V
CE
= 80Vdc, V
BE
= 1.5Vdc
2N3740
2N3741
I
CEX
300
300
ηAdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 80Vdc
2N3740
2N3741
I
CBO
100
100
ηAdc
Emitter-Base Cutoff Current
V
EB
= 7.0Vdc
I
EBO
100
ηAdc
TO-66 (TO-213AA)
* See Appendix A for
Package Outline
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0021 Rev. 2 (100698) Page 2 of 3
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 100mAdc, V
CE
= 1.0Vdc
I
C
= 250mAdc, V
CE
= 1.0Vdc
I
C
= 500mAdc, V
CE
= 1.0Vdc
I
C
= 1.0Adc, V
CE
= 1.0Vdc
I
C
= 4.0Adc, V
CE
= 5.0Vdc
h
FE
40
30
20
10
3.0
120
Collector-Emitter Saturation Voltage
I
C
= 250mAdc, I
B
= 25mAdc
I
C
= 1.0Adc, I
B
= 125mAdc
V
CE(sat)
0.4
0.6
Vdc
Base-Emitter Voltage
I
C
= 250mAdc, V
CE
= 1.0Vdc
V
BE(on)
1.0 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 100mAdc, V
CE
= 10Vdc, f = 5.0MHz
|h
fe
| 1.0 12
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 10Vdc, f = 1.0kHz
h
fe
25 250
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz f 1.0MHz
C
obo
100 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
V
CC
= 30Vdc; I
C
= 1.0Adc; I
B
= 0.1Adc
t
on
400 µs
Turn-Off Time
V
CC
= 30Vdc; I
C
= 1.0Adc; I
B1
= I
B2
= 0.1Adc
t
off
1.0 µs
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 6.25Vdc, I
C
= 4.0Adc
Test 2
V
CE
= 20Vdc, I
C
= 1.25Adc
Test 3
V
CE
= 50Vdc, I
C
= 150mAdc
V
CE
= 65Vdc, I
C
= 150mAdc
2N3740
2N3741
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0021 Rev. 2 (100698) Page 3 of 3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. These dimensions should be measured at points .050 to .055 inch (1.27 to 1.40 mm) below seating plane. When gauge is not
used, measurement will be made at seating plane.
4. Both terminals.
5. At both ends.
6. Two holes.
7. The collector shall be electrically connected to the case.
8. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1.
9. In accordance with ASME Y14.5M, diameters are equivalent to φ symbology.
10. Lead 1 is the emitter, lead 2 is the base, collector is the case.
FIGURE 1. Physical dimensions, TO-66 (2N3740, 2N3741)
Dimensions
Ltr Inches
Millimeters
Notes
Min
Max Min Max
CD
.620 15.75 9
CH
.250 .340 6.35 8.64
HT
.050 .075 1.27 1.91
HR
.350 8.89
HR
1
.115 .145 2.92 3.68 5
LD
.028 .034 0.71 0.86 4, 8, 9
LL
.360 .500 9.14 12.70 4, 8
L
1
.050 1.27 4, 8
MHD
.142 .152 3.61 3.86 6, 9
MHS
.958 .962 24.33 24.43
PS
.190 .210 4.83 5.33 3
PS
1
.093 .107 2.36 2.72 3
S
.570 .590 14.48 14.99 3

Jantxv2N3741

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet