TC7S86F/FU
2014-03-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7S86F, TC7S86FU
EXCLUSIVE OR Gate
Features
• High Speed : t
pd =
10ns (typ.) at V
CC
= 5 V
• Low power dissipation : I
CC
= 1 μA (Max) at Ta = 25°C
• High noise immunity : V
NIH
= V
NIL
= 28% V
CC
(Min)
• Output drive capability : 5 LSTTL Loads
• Symmetrical Output Impedance : |I
OH
| = I
OL
= 2mA (Min)
• Balanced propagation delays : t
pLH
≒
t
pHL
• Wide operating voltage range : V
CC
= 2 to 6 V
Marking
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Supply voltage V
CC
−0.5 to 7.0 V
DC input voltage V
IN
−0.5 to V
CC
+ 0.5 V
DC output voltage V
OUT
−0.5 to V
CC
+ 0.5 V
Input diode current I
IK
±20 mA
Output diode current I
OK
±20 mA
DC output current I
OUT
±12.5 mA
DC V
CC
/ground current I
CC
±25 mA
Power dissipation P
D
200 mW
Storage temperature T
stg
−65 to 150 °C
Lead temperature (10 s) T
L
260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
TC7S86F
(SMV)
TC7S86FU
(USV)
Weight
SSOP5-P-0.95 : 0.016 g (Typ.)
SSOP5-P-0.65A : 0.006 g (Typ.)
Pin Assignment
(top view)
Product name
E 8
5 V
CC
4 OUT Y
IN A 2
GND 3
IN B 1
Start of commercial production
1991-12
