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SQ3427AEEV-T1_GE3

P1-P3P4-P6P7-P9P10-P12
SQ3427AEEV
www.vishay.com
Vishay Siliconix
S15-1676-Rev. A, 16-Jul-15
1
Document Number: 65333
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
Marking Code: 8Y
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
c
• 100 % R
g
and UIS tested
• Typical ESD protection 800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) -60
R
DS(on)
() at V
GS
= -10 V 0.095
R
DS(on)
() at V
GS
= -4.5 V 0.135
I
D
(A) -5.3
Configuration Single
Package TSOP-6
P-Channel MOSFET
(4) S
(1, 2, 5, 6) D
(3) G
Top View
TSOP-6 Single
1
D
2
D
3
G
D
6
D
5
S
4
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
-5.3
A
T
C
= 125 °C -3
Continuous Source Current (Diode Conduction) I
S
-6.3
Pulsed Drain Current
a
I
DM
-21
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-21
Single Pulse Avalanche Energy E
AS
22 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
5
W
T
C
= 125 °C 1.6
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
30
SQ3427AEEV
www.vishay.com
Vishay Siliconix
S15-1676-Rev. A, 16-Jul-15
2
Document Number: 65333
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= -250 μA -60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - ± 10
mA
V
DS
= 0 V, V
GS
= ± 10 V - - ± 2
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -60 V - - -1
μA V
GS
= 0 V V
DS
= -60 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -60 V, T
J
= 175 °C - - -150
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
-5 V -10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -4.5 A - 0.079 0.095
V
GS
= -10 V I
D
= -4.5 A, T
J
= 125 °C - - 0.148
V
GS
= -10 V I
D
= -4.5 A, T
J
= 175 °C - - 0.178
V
GS
= -4.5 V I
D
= -3.5 A - 0.112 0.135
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -4 A - 9 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -30 V, f = 1 MHz
- 700 1000
pF Output Capacitance C
oss
-90120
Reverse Transfer Capacitance C
rss
-5075
Total Gate Charge
c
Q
g
V
GS
= -10 V V
DS
= -30 V, I
D
= -5 A
-15.322
nC Gate-Source Charge
c
Q
gs
-2.5-
Gate-Drain Charge
c
Q
gd
-5.4-
Gate Resistance R
g
f = 1 MHz 2.7 5.4 8.1
Turn-On Delay Time
c
t
d(on)
V
DD
= -30 V, R
L
= 6
I
D
-5 A, V
GEN
= -10 V, R
g
= 1
-812
ns
Rise Time
c
t
r
-2435
Turn-Off Delay Time
c
t
d(off)
-2638
Fall Time
c
t
f
-3350
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---21A
Forward Voltage V
SD
I
F
= -1.6 A, V
GS
= 0 V - -0.8 -1.2 V
SQ3427AEEV
www.vishay.com
Vishay Siliconix
S15-1676-Rev. A, 16-Jul-15
3
Document Number: 65333
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
Transfer Characteristics
Transconductance
0
4
8
12
16
20
0246810
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
V
GS
= 1 V, 2 V
0
1
2
3
4
5
012345
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
200
400
600
800
1000
1200
0 102030405060
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.0
0.1
0.2
0.3
0.4
0.5
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
4
8
12
16
20
0246810
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
3
6
9
12
15
0246810
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
P1-P3P4-P6P7-P9P10-P12

SQ3427AEEV-T1_GE3

Mfr. #:
Buy SQ3427AEEV-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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