VS-12CTQ035-N3

VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Oct-15
1
Document Number: 94130
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 6 A
FEATURES
175 °C T
J
operation
Center tap TO-220 package
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 6 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.53 V
I
RM
max. 7 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
8 mJ
Anode
1
3
Common
cathode
Base
common
cathode
2
Anode
2
TO-220AB
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 12 A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 μs sine 690 A
V
F
6 A
pk
, T
J
= 125 °C (per leg) 0.53 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
12CTQ035PbF
VS-
12CTQ035-N3
VS-
12CTQ040PbF
VS-
12CTQ040-N3
VS-
12CTQ045PbF
VS-
12CTQ045-N3
UNITS
Maximum DC
reverse voltage
V
R
35 35 40 40 45 45 V
Maximum working
peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current. See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 160 °C, rectangular waveform
6
A
per device 12
Maximum peak one cycle non-repetitive
surge current per leg. See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
690
A
10 ms sine or 6 ms rect. pulse 140
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH 8mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.20 A
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Oct-15
2
Document Number: 94130
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
6 A
T
J
= 25 °C
0.60
V
12 A 0.73
6 A
T
J
= 125 °C
0.53
12 A 0.64
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.8
mA
T
J
= 125 °C 7.0
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.35 V
Forward slope resistance r
t
18.23 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 400 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
3.50
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.75
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
12CTQ035
12CTQ040
12CTQ045
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Oct-15
3
Document Number: 94130
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0 102030 45
0.0001
0.01
0.1
1
10
100
540
0.001
352515
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 20304050
100
1000
10
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-12CTQ035-N3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-12CTQ035-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet