AD8072ARMZ-REEL7

REV. D
AD8072/AD8073
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8072/AD8073 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.2 V
Internal Power Dissipation
2
AD8072 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . . 1.3 Watts
AD8072 8-Lead Small Outline (SO-8) . . . . . . . . . 0.9 Watts
AD8072 8-Lead µSOIC (RM) . . . . . . . . . . . . . . . . 0.6 Watts
AD8073 14-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.6 Watts
AD8073 14-Lead Small Outline (R) . . . . . . . . . . . 1.0 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . ±1.25 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range
N, R, RM Packages . . . . . . . . . . . . . . . . . . –65°C to +125°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic Package: θ
JA
= 90°C/W
8-Lead SOIC Package: θ
JA
= 140°C/W
8-Lead µSOIC Package: θ
JA
= 214°C/W
14-Lead Plastic Package: θ
JA
= 75°C/W
14-Lead SOIC Package: θ
JA
= 120°C/W
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
*AD8072ARM –40°C to +85°C 8-Lead µSOIC RM-8
*AD8072ARM-REEL –40°C to +85°C 13" Reel 8-Lead µSOIC RM-8
*AD8072ARM-REEL7 –40°C to +85°C 7" Reel 8-Lead µSOIC RM-8
AD8072JN 0°C to 70°C 8-Lead Plastic DIP N-8
AD8072JR 0°C to 70°C 8-Lead SOIC SO-8
AD8072JR-REEL 0°C to 70°C 13" Reel 8-Lead SOIC SO-8
AD8072JR-REEL7 0°C to 70°C 7" Reel 8-Lead SOIC SO-8
AD8073JN 0°C to 70°C 14-Lead Plastic DIP N-14
AD8073JR 0°C to 70°C 14-Lead Narrow SOIC R-14
AD8073JR-REEL 0°C to 70°C 13" Reel 14-Lead SOIC R-14
AD8073JR-REEL7 0°C to 70°C 7" Reel 14-Lead SOIC R-14
*Brand Code: HLA
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8072
and AD8073 is limited by the associated rise in junction tem-
perature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8072 and AD8073 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maximum
junction temperature (150°C) is not exceeded under all condi-
tions. To ensure proper operation, it is necessary to observe the
maximum power derating curves shown in Figures 2 and 3.
MAXIMUM POWER DISSIPATION W
AMBIENT TEMPERATURE
C
2.0
1.5
0
50 9040 30 20 10 0 1020 30 5060 708040
1.0
0.5
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
T
J
= 150
C
SOIC
Figure 2. AD8072 Maximum Power Dissipation vs.
Temperature
AMBIENT TEMPERATURE
C
2.5
2.0
0.5
50 9040
MAXIMUM POWER DISSIPATION W
30 20 100 1020 304050 60 80
1.5
1.0
70
14-LEAD SOIC
14-LEAD DIP PACKAGE
T
J
= 150
C
Figure 3. AD8073 Maximum Power Dissipation vs.
Temperature
WARNING!
ESD SENSITIVE DEVICE
REV. D
AD8072/AD8073
–5–
FREQUENCY MHz
7
CLOSED-LOOP GAIN dB
6
0.1
0.1 10001.0 10 100
5
4
0
3
2
1
V
S
= 5V
R
F
= 1k
R
L
= 150 TO 2.5V
A
V
= 2
V
IN
= 100mV p-p
0C
25C
70C
TPC 1. Frequency Response Over Temperature; V
S
= 5 V
FREQUENCY MHz
7
CLOSED-LOOP GAIN dB
6
0.1
0.1 10001.0 10 100
5
4
0
3
2
1
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
V
IN
= 100mV p-p
0C
25C
70C
TPC 2. Frequency Response Over Temperature; V
S
=
±
5 V
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 5001.0 10 100
5.9
5.8
5.4
5.7
5.6
5.5
V
S
= 5V
R
F
= 1k
R
L
= 150 TO 2.5V
A
V
= 2
V
IN
= 100mV p-p
70C
0C, 25C
TPC 3. 0.1 dB Flatness vs. Frequency Over Temperature;
V
S
= 5 V
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 5001.0 10 100
5.9
5.8
5.4
5.7
5.6
5.5
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
V
IN
= 100mV p-p
0
C, 25
C
70
C
TPC 4. 0.1 dB Flatness vs. Frequency Over Temperature;
V
S
=
±
5 V
0.00 0.03 0.07 0.08 0.08 0.08 0.09 0.08 0.08 0.07 0.06
DIFFERENTIAL GAIN %
MIN = 0.00 MAX = 0.09 p-p/MAX = 0.09
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.02
V
S
= 5V, R
F
= 1k, R
L
= 150 TO 1.5V, A
V
= 2
0.00 0.05 0.09 0.10 0.09 0.08 0.06 0.06 0.05 0.04 0.02
1
ST
2
ND
3
RD
4
TH
5
TH
6
TH
7
TH
8
TH
9
TH
10
TH
11
TH
MODULATING RAMP LEVEL IRE
DIFFERENTIAL PHASE deg
MIN = 0.00 MAX = 0.10 p-p = 0.10
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.02
V
S
= 5V, R
F
= 1k, R
L
= 150 TO 1.5V, A
V
= 2
TPC 5. Differential Gain and Phase, V
S
= 5 V
0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.02 0.03 0.03 0.03
DIFFERENTIAL GAIN %
MIN = 0.03 MAX = 0.00 p-p/MAX = 0.03
0.00
0.01
0.02
0.03
0.00 0.00 0.00 0.02 0.03 0.05 0.07 0.08 0.10 0.10 0.10
1
ST
2
ND
3
RD
4
TH
5
TH
6
TH
7
TH
8
TH
9
TH
10
TH
11
TH
MODULATING RAMP LEVEL IRE
DIFFERENTIAL PHASE deg
MIN = 0.10 MAX = 0.00 p-p = 0.10
0.02
0.00
0.02
0.04
0.06
0.08
0.10
0.12
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
TPC 6. Differential Gain and Phase, V
S
=
±
5 V
Typical Performance Characteristics
REV. D
AD8072/AD8073
–6–
FREQUENCY MHz
0
10
80
0.1 5001.0 10 100
20
30
70
40
50
60
90
100
CROSSTALK dB
AMP 2 OUTPUT
SOIC PACKAGE
DRIVE AMP 2
RECEIVE AMPS 1, 3 AD8073
RECEIVE AMP 1 AD8072
V
S
= 5V, 5V
R
F
= 1k, R
L
= 150
A
V
= 2
V
IN
= 1V p-p
TPC 7. Crosstalk vs. Frequency
FREQUENCY MHz
40
50
100
0.1 1
DISTORTION dBc
10
70
80
90
60
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
V
OUT
= 2V p-p
3RD
HARMONIC
2ND
HARMONIC
TPC 8. Distortion vs. Frequency; V
S
=
±
5 V
FREQUENCY MHz
40
DISTORTION dBc
50
100
0.1 1 10
70
80
90
60
3RD
HARMONIC
2ND
HARMONIC
V
S
= 5V
R
F
= 1k
R
L
= 150 TO 2.5V
A
V
= 2
V
OUT
= 2V p-p
TPC 9. Distortion vs. Frequency; V
S
= 5 V
100M
1k
10
10k
100
1k
100k
10k
10M1M100k
FREQUENCY Hz
DEGREES
0
20
40
60
80
100
120
140
160
180
1G
DEGREES
OHMS ()
T
Z
1M
TPC 10. Open-Loop Transimpedance vs. Frequency
FREQUENCY MHz
0.1 1k1 10 100
3
2
1
0
1
2
3
4
5
6
A
V
= 5
V
S
= 5V
R
F
= 1k
R
L
= 150
V
OUT
= 200mV p-p
A
V
= 1
A
V
= 10
A
V
= 2
NORMALIZED CLOSED-LOOP GAIN dB
TPC 11. Normalized Frequency Response; V
S
=
±
5 V
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 5001 10 100
5.9
5.8
5.4
5.7
5.6
5.5
6
5
4
3
2
1
0
0.1 dB
DIV
1 dB
DIV
CLOSED-LOOP GAIN dB
7
1
V
S
= 5V
V
O
= 2V p-p
R
F
= R
G
= 1k
R
L
= 150 TO 2.5V
A
V
= 2
TPC 12. Large Signal Frequency Response

AD8072ARMZ-REEL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Video Amplifiers IC DUAL
Lifecycle:
New from this manufacturer.
Delivery:
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