Nexperia
PMPB25ENE
30 V, N-channel Trench MOSFET
V
GS
(V)
0 431 2
aaa-026674
28
I
D
(A)
0
4
8
12
16
20
24
T
j
= 175 °C T
j
= 25 °C
V
DS
> I
D
x R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-026675
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-026676
4
V
GS(th)
(V)
0
1
2
3
max
typ
min
I
D
= 250 μA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
10
2
101
aaa-026677
10
3
10
2
10
4
C
(pF)
10
C
iss
C
rss
C
oss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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©
Nexperia B.V. 2018. All rights reserved
Product data sheet 26 April 2018 8 / 15
