VUO55-16NO7
011
500
1000
1500
2000
2500
3000
V
F
[V]
I
F
[A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
20
40
60
80
100
10
-3
10
-2
10
-1
10
0
300
400
500
600
1 10 100 1000 10000 100000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2550751001251500 5 10 15 20
0
6
12
18
24
0 25 50 75 100 125 150
0
20
40
60
I
FSM
[A]
t[s]
t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.040 0.010
2 0.150 0.030
3 0.610 1.350
4 1.900 14.00
0.8 x V
RRM
50 Hz
T
VJ
= 25°C
T
VJ
= 125°C
150°C
T
VJ
=130°C
T
VJ
= 45°C
T
VJ
= 130°C
T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fi
. 6 Transient thermal im
edance
unction to case vs. time
er diode
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130306aData according to IEC 60747and per semiconductor unless otherwise specified
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