IRK.71, .91 Series
3
Bulletin I27132 rev. I 09/04
www.irf.com
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5) gate open circuit
T
J
Junction operating
temperature range
T
stg
Storage temp. range - 40 to 125
R
thJC
Max. internal thermal
resistance, junction 0.165 0.135 Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
15 mA T
J
= 125
o
C, gate open circuit
Thermal and Mechanical Specifications
500 V/µs
Parameters IRK.71 IRK.91 Units Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface flat, smooth and greased
V
INS
RMS isolation voltage V
P
GM
Max. peak gate power 12 12
P
G(AV)
Max. average gate power 3.0 3.0
I
GM
Max. peak gate current 3.0 3.0 A
-V
GM
Max. peak negative
gate voltage
V
GT
Max. gate voltage 4.0 T
J
= - 40°C
required to trigger 2.5 T
J
= 25°C
1.7 T
J
= 125°C
I
GT
Max. gate current 270 T
J
= - 40°C
required to trigger 150 mA T
J
= 25°C
80 T
J
= 125°C
V
GD
Max. gate voltage T
J
= 125
o
C,
that will not trigger rated V
DRM
applied
I
GD
Max. gate current T
J
= 125
o
C,
that will not trigger rated V
DRM
applied
Parameters IRK.71 IRK.91 Units Conditions
0.25 V
6mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters IRK.71 IRK.91 Units Conditions
Sine half wave conduction Rect. wave conduction
Devices Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)