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ISL9K860P3

P1-P3P4-P6
©2002 Fairchild Semiconductor Corporation
April 2002
ISL9K860P3
ISL9K860P3 Rev. C
ISL9K860P3
8A, 600V Stealth™ Dual Diode
General Description
The ISL9K860P3 is a Stealth™ dual diode optimized
for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (I
RRM
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
• Soft Recovery. . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Device Maximum Ratings (per leg) T
C
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
RRM
Peak Repetitive Reverse Voltage 600 V
V
RWM
Working Peak Reverse Voltage 600 V
V
R
DC Blocking Voltage 600 V
I
F(AV)
Average Rectified Forward Current (T
C
= 147
o
C)
Total Device Current (Both Legs)
8
16
A
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave) 16 A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
P
D
Power Dissipation 85 W
E
AVL
Avalanche Energy (1A, 40mH) 20 mJ
T
J
, T
STG
Operating and Storage Temperature Range -55 to 175 °C
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
JEDEC TO-220AB
A
1
K
A
2
CATHODE
(FLANGE)
CATHODE
ANODE 2
ANODE 1
Package Symbol
©2002 Fairchild Semiconductor Corporation ISL9K860P3 Rev. C
ISL9K860P3
Package Marking and Ordering Information
Electrical Characteristics (per leg)
T
C
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
K860P3 ISL9K860P3 TO-220AB - -
Symbol Parameter Test Conditions Min Typ Max Units
I
R
Instantaneous Reverse Current V
R
= 600V T
C
= 25°C - - 100 µA
T
C
= 125°C--1.0mA
V
F
Instantaneous Forward Voltage I
F
= 8A T
C
= 25°C-2.02.4V
T
C
= 125°C-1.62.0V
C
J
Junction Capacitance V
R
= 10V, I
F
= 0A - 30 - pF
t
rr
Reverse Recovery Time I
F
= 1A, dI
F
/dt = 100A/µs, V
R
= 30V - 18 25 ns
I
F
= 8A, dI
F
/dt = 100A/µs, V
R
= 30V - 21 30 ns
t
rr
Reverse Recovery Time I
F
= 8A,
dI
F
/dt = 200A/µs,
V
R
= 390V, T
C
= 25°C
-28-ns
I
RRM
Maximum Reverse Recovery Current - 3.2 - A
Q
RR
Reverse Recovery Charge - 50 - nC
t
rr
Reverse Recovery Time I
F
= 8A,
dI
F
/dt = 200A/µs,
V
R
= 390V,
T
C
= 125°C
-77-ns
S Softness Factor (t
b
/t
a
)-3.7-
I
RRM
Maximum Reverse Recovery Current - 3.4 - A
Q
RR
Reverse Recovery Charge - 150 - nC
t
rr
Reverse Recovery Time I
F
= 8A,
dI
F
/dt = 600A/µs,
V
R
= 390V,
T
C
= 125°C
-53-ns
S Softness Factor (t
b
/t
a
)-2.5-
I
RRM
Maximum Reverse Recovery Current - 6.5 - A
Q
RR
Reverse Recovery Charge 195 - nC
dI
M
/dt Maximum di/dt during t
b
- 500 - A/µs
R
θJC
Thermal Resistance Junction to Case - - 1.75 °C/W
R
θJA
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
©2002 Fairchild Semiconductor Corporation ISL9K860P3 Rev. C
ISL9K860P3
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
0 0.5 0.75 1 2.50.25 1.5 2 2.25
0
2
4
6
8
10
12
14
16
2.75
25
o
C
175
o
C
150
o
C
100
o
C
125
o
C
1.751.25
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (µA)
100
10
1
100 200 300 500 600400
0.1
25
o
C
175
o
C
150
o
C
125
o
C
100
o
C
I
F
, FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
10 16
t, RECOVERY TIMES (ns)
70
80
2 4 6 8 12 14
V
R
= 390V, T
J
= 125°C
t
b
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
t
a
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
10
20
30
40
50
60
700 1000
t, RECOVERY TIMES (ns)
200 300 400 500 600 800 900
70
80
90
V
R
= 390V, T
J
= 125°C
t
b
AT I
F
= 16A, 8A, 4A
t
a
AT I
F
= 16A, 8A, 4A
I
F
, FORWARD CURRENT (A)
0
2
3
4
5
6
7
8
16
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
dI
F
/dt = 800A/µs
dI
F
/dt = 500A/µs
dI
F
/dt = 200A/µs
V
R
= 390V, T
J
= 125°C
9
10
11
2 4 6 8 10 12 14
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
2
4
6
8
10
700 1000
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
V
R
= 390V, T
J
= 125°C
I
F
= 16A
I
F
= 8A
I
F
= 4A
12
14
200 300 400 500 600 800 900
P1-P3P4-P6

ISL9K860P3

Mfr. #:
Buy ISL9K860P3
Manufacturer:
ON Semiconductor / Fairchild
Description:
Diodes - General Purpose, Power, Switching 8A 600V
Lifecycle:
New from this manufacturer.
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