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DTC123TET1G

P1-P3P4-P6P7-P9P10-P12
MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
www.onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC123TF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 4.0
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
160 350 −
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 1.0 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 0.6 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 10 mA)
V
i(on)
1.1 0.8 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 1.5 2.2 2.9
kW
Resistor Ratio R
1
/R
2
− − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3
75°C
T
A
= −25°C
Figure 2. V
CE(sat)
vs. I
C
25°C
I
C
/I
B
= 10
40
1
0.1
0.001
6020080
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
0.01
100
Figure 3. DC Current Gain
V
CE
= 10 V
1
1000
100
10
1
10
I
C
, COLLECTOR CURRENT (mA)
h
FE,
DC CURRENT GAIN
T
A
= −25°C
10
0
75°C
25°C
Figure 4. Output Capacitance
0
0.4
2.4
20
1.6
0.8
0
V
R,
REVERSE VOLTAGE (V)
C
ob,
OUTPUT CAPACITANCE (pF)
10 504030
2.8
3.2
1.2
2.0
Figure 5. Output Current vs. Input Voltage
0
100
10
14
1
0.1
0.01
23
V
in,
INPUT VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
V
O
= 5 V
T
A
= −25°C
75°C
25°C
Figure 6. Input Voltage vs. Output Current
V
O
= 0.2 V
0
10
20 30 50
1
0.1
I
C,
COLLECTOR CURRENT (mA)
T
A
= −25°C
10 40
75°C
25°C
V
in,
INPUT VOLTAGE (V)
5
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS
NSBC123TF3
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100101
10
100
1000
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.2
1.6
2.0
2.01.6 2.41.20.80.40
0.1
1
10
100
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
0.01
P1-P3P4-P6P7-P9P10-P12

DTC123TET1G

Mfr. #:
Buy DTC123TET1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR
Lifecycle:
New from this manufacturer.
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