IXTA160N085T Datasheet IXTA160N085T, IXTQ160N085T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C85V

V

DGR

T

J

= 25°C to 175°C; R

GS

= 1 MΩ 85 V

V

GSM

±20 V

I

D25

T

C

= 25°C 160 A

I

DRMS

External lead current limit 75 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

350 A

I

AR

T

C

= 25°C75A

E

AS

T

C

= 25°C 1.0 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 3 V/ns

T

J

≤ 150°C, R

G

= 10 Ω

P

D

T

C

= 25°C 360 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

Maximum tab temperature for soldering 260 °C

TO-263 package for 10s

M

d

Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.

Weight TO-3P 5.5 g

TO-220 4 g

TO-263 3 g

G = Gate D = Drain

S = Source TAB = Drain

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS

= 0 V, I

D

= 250 µA85V

V

GS(th)

V

DS

= V

GS

, I

D

= 1 mA 2.0 4.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±200 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125°C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 50 A 5.0 6.0 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Trench Gate

Power MOSFET

Advance Technical Information

N-Channel Enhancement Mode

Features

z

International standard packages

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

TO-3P (IXTQ)

TO-263 (IXTA)

TO-220 (IXTP)

G

D

S

(TAB)

D

(TAB)

G

S

G

S

(TAB)

IXTQ 160N085T

IXTA 160N085T

IXTP 160N085T

V

DSS

= 85 V

I

D25

= 160 A

R

DS(on)

= 6.0 m

ΩΩ

Ω

DS99347(02/05)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 160N085T IXTP 160N085T

IXTQ 160N085T

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 50A, pulse test 64 85 S

C

iss

6400 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 927 pF

C

rss

92 pF

t

d(on)

37 ns

t

r

V

GS

= 10 V, V

DS

= 60 V, I

D

= 35A 61 ns

t

d(off)

R

G

= 5 Ω (External) 65 ns

t

f

36 ns

Q

g(on)

164 nC

Q

gs

V

GS

= 10 V, V

DS

= 40 V, I

D

= 80 A 48 nC

Q

gd

45 nC

R

thJC

0.42 K/W

R

thCK

(TO-3P) 0.21 K/W

(TO-220) 0.25 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 160 A

I

SM

Repetitive 350 A

V

SD

I

F

= 50 A, V

GS

= 0 V, 1.2 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25 A, -di/dt = 100 A/µs 100 ns

Q

RM

V

R

= 25 V, V

GS

= 0 V 0.6 µC

TO-3P (IXTQ) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405

E1 6.86 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

TO-263 (IXTA) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463

IXTA 160N085T IXTP 160N085T

IXTQ 160N085T

Fig. 2. Extended Output Characteristics

@ 25

°

C

0

40

80

120

160

200

240

280

320

00.5 11.5 22.533.54

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

4V

6V

7V

5V

Fig. 3. Output Characteristics

@ 150

°

C

0

20

40

60

80

100

120

140

160

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

3V

4V

5V

6V

Fig. 1. Output Characteristics

@ 25

°

C

0

20

40

60

80

100

120

140

160

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

5V

4V

6V

Fig. 4. R

DS(on

)

Normalized to I

D

= 50A

Value vs. Junction Temperature

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalize

d

I

D

= 100A

I

D

= 50A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fig. 5. R

DS(on)

Normalized to I

D

= 50A

Value vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 40 80 120 160 200 240 280 320

I

D

- Amperes

R

D S ( o n )

- Normalize

d

T

J

= 25

°

C

T

J

= 175

°

C

V

GS

= 10V

15V - - - -

-

IXTA160N085T

IXTA160N085T

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