NLAS4053
http://onsemi.com
4
ORDERING INFORMATION
Device Package Shipping
†
NLAS4053DG SOIC−16
(Pb−Free)
48 Units / Rail
NLAS4053DR2 SOIC−16 2500 Tape & Reel
NLAS4053DR2G SOIC−16
(Pb−Free)
2500 Tape & Reel
NLAS4053DT TSSOP−16* 96 Units / Rail
NLAS4053DTG TSSOP−16* 96 Units / Rail
NLAS4053DTR2 TSSOP−16* 2500 Tape & Reel
NLAS4053DTR2G TSSOP−16* 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Symbol Parameter Condition
V
CC
V
Guaranteed Limit
Unit
−55 to 25°C v85°C v125°C
V
IH
Minimum High−Level Input
Voltage, Address and Inhibit Inputs
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
V
IL
Maximum Low−Level Input
Voltage, Address and Inhibit Inputs
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
I
IN
Maximum Input Leakage Current,
Address or Inhibit Inputs
V
IN
= 6.0 or GND 0 V to 6.0 V 0.1 1.0 1.0
A
I
CC
Maximum Quiescent Supply
Current (per Package)
Channel Select, Enable and
V
IS
= V
CC
or GND
6.0 4.0 40 80
A
DC ELECTRICAL CHARACTERISTICS − Analog Section
Symbol Parameter Test Conditions
V
CC
V
V
EE
V
Guaranteed Limit
Unit
−55 to 25°C
v85_C v125_C
R
ON
Maximum “ON” Resistance V
IN
= V
IL
or V
IH
V
IS
= V
EE
to V
CC
|I
S
| = 10 mA
(Figures 4 thru 9)
3.0
4.5
3.0
0
0
−3.0
86
37
26
108
46
33
120
55
37
R
ON
Maximum Difference in “ON”
Resistance Between Any Two
Channels in the Same Package
V
IN
= V
IL
or V
IH,
V
IS
= 2.0 V
V
IS
= 3.5 V
|I
S
| = 10 mA, V
IS
= 2.0 V
3.0
4.5
3.0
0
0
−3.0
15
13
10
20
18
15
20
18
15
R
flat(ON)
COM−NO
On−Resistance Flatness
V
com
1, 2, 3.5 V
V
com
−2, 0, 2 V
|I
S
| = 10 mA
4.5
3.0
0
−3.0
4
2
4
2
5
3
I
NC(OFF)
I
NO(OFF)
Maximum Off−Channel Leakage
Current
Switch Off
V
IN
= V
IL
or V
IH
V
IO
= V
CC
−1.0 V or V
EE
+1.0 V
(Figure 17)
6.0
3.0
0
−3.0
0.1
0.1
5.0
5.0
100
100
nA
I
COM(ON)
Maximum On−Channel Leakage
Current, Channel− to−Channel
Switch On
V
IO
= V
CC
−1.0 V or V
EE
+1.0 V
(Figure 17)
6.0
3.0
0
−3.0
0.1
0.1
5.0
5.0
100
100
nA
