Nexperia
BCW68 series
45 V, 800 mA PNP general-purpose transistor
BCW68X_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
4 / 13
aaa-026538
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.75
0.50
0.33
0.20
0.10
0.05
FR4 PCB, standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10 Electrical characteristics
Table 7. Electrical characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -40 V; I
E
= 0 A - - -20 nAI
CBO
collector-base
cut-off current
V
CB
= -40 V; I
E
= 0 A; T
j
= 150 °C - - -5 μA
I
EBO
emitter-base
cut-off current
V
EB
= -5 V; I
C
= 0 A - - -20 nA
DC current gain
BCW68F/G/H V
CE
= -1 V; I
C
= -100 μA 100 - -
BCW68F/G/H V
CE
= -1 V; I
C
= -1 mA 100 - -
BCW68F/G/H V
CE
= -1 V; I
C
= -10 mA 100 - -
BCW68F 100 - 250
BCW68G 160 - 400
BCW68H
V
CE
= -1 V; I
C
= -100 mA
[1]
250 - 600
BCW68F 35 - -
BCW68G 60 - -
h
FE
BCW68H
V
CE
= -2 V; I
C
= -500 mA
[1]
100 - -
I
C
= -100 mA; I
B
= -10 mA
[1]
- - -350 mVV
CEsat
collector-emitter
saturation voltage
I
C
= -500 mA; I
B
= -50 mA
[1]
- - -450 mV
I
C
= -100 mA; I
B
= -10 mA
[1]
- - -1.25 VV
BEsat
base-emitter
saturation voltage
I
C
= -500 mA; I
B
= -50 mA
[1]
- - -1.25 V
f
T
transition frequency V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz 80 - - MHz
C
c
collector capacitance V
CB
= -10 V; I
E
= i
e
= 0 A; f = 1 MHz - 5 - pF
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02