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NTTD4401FR2

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 6
1 Publication Order Number:
NTTD4401F/D
NTTD4401F
FETKYt Power MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8t Package
The FETKY product family incorporates low R
DS(on)
, true logic level
MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
• Low V
F
and Low Leakage Schottky Diode
• Lower Component Placement and Inventory Costs along with Board
Space Savings
• Logic Level Gate Drive – Can be Driven by Logic ICs
• Pb−Free Package is Available
Applications
• Buck Converter
• Synchronous Rectification
• Low Voltage Motor Control
• Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
$10 V
Continuous Drain
Current (Note 1)
T
A
= 25°C
I
D
−3.3
A
T
A
= 100°C −2.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.42 W
Continuous Drain
Current (Note 2)
T
A
= 25°C
I
D
−2.4
A
T
A
= 100°C −1.5
Power Dissipation
(Note 2)
Steady
State
T
A
= 25°C P
D
0.78 W
Pulsed Drain
Current
t = 10 ms
I
DM
−10 A
Operating Junction and
Storage Temperature
T
J
, T
STG
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy Starting T
A
= 25°C (t v 10 s)
EAS 150 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
Device Package Shipping
†
ORDERING INFORMATION
NTTD4401FR2 Micro8 4000/Tape & Reel
http://onsemi.com
NTTD4401FR2G
Micro8
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
−20 V
20 V
100 mW @ −2.7 V
70 mW @ −4.5 V
600 mV @ I
F
= 2.0 A
R
DS(on)
Typ
2.0 A
I
D
Max
V
(BR)DSS
MOSFET PRODUCT SUMMARY
SCHOTTKY DIODE SUMMARY
V
R
Max V
F
MaxI
F
Max
−3.3 A
−2.7 A
G
D
P−Channel MOSFET
S
C
A
Schottky Diode
Micro8
CASE 846A
1
8
MARKING DIAGRAM &
PIN ASSIGNMENT
BG = Specific Device Code
WW = Work Week
G = Pb−Free Package
WW
BG G
G
(Note: Microdot may be in either location)
1
8
AASG
CCDD
NTTD4401F
http://onsemi.com
2
SCHOTTKY DIODE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage V 20 V
Average Forward Current (Rated V
R
, T
A
= 100°C) I
O
1.0 A
Peak Repetitive Forward Current (Note 3) I
FRM
2.0 A
Non−Repetitive Peak Surge Current (Note 4) I
FSM
20 A
THERMAL RESISTANCE RATINGS
Rating Symbol
FET Schottky
Unit
Max
Junction−to−Ambient – Steady State (Note 5)
R
q
JA
88 135 °C/W
Junction−to−Ambient – Steady State (Note 6)
R
q
JA
160 250 °C/W
MOSFET ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V −20 − − V
Zero Gate Voltage Drain Current (Note 7) I
DSS
V
GS
= 0 V, V
DS
= −16 V
− − −1.0
mA
V
GS
= 0 V, T
J
= 125°C, V
DS
= −16 V
− − −25
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±10 V − − ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.5 − −1.5 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
− − 2.5 − mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −3.3 A − 70 90
mW
V
GS
= −2.5 V, I
D
= −1.2 A − 100 150
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −2.7 A − 4.2 − S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −16 V
− 550 750
pF
Output Capacitance C
OSS
− 200 300
Reverse Transfer Capacitance C
RSS
− 50 175
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −16 V,
I
D
= −3.3 A
− 10 18
nC
Gate−to−Source Gate Charge Q
GS
− 1.5 3.0
Gate−to−Drain “Miller’’ Charge Q
GD
− 5.0 10
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −3.3 A, R
G
= 6.0 W
− 11 20
ns
Rise Time t
r
− 35 65
Turn−Off Delay Time t
d(OFF)
− 33 60
Fall Time t
f
− 29 55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −2.0 A − −0.88 −1.0 V
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/dt = 100 A/ms,
I
S
= −3.3 A
− 37 50
ns
Charge Time t
a
− 16 −
Discharge Time t
b
− 21 −
Reverse Recovery Charge Q
RR
− − 0.025 0.05 nC
3. Rated V
R
, square wave, 20 kHz, T
A
= 105°C.
4. Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
5. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
6. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
7. Body diode leakage current.
NTTD4401F
http://onsemi.com
3
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage B
V
I
R
= 1.0 mA 20 − − V
Reverse Leakage Current I
R
V
R
= 20 V
T
A
= 25°C − − 0.05
mA
T
A
= 125°C − − 10
Forward Voltage V
F
I
F
= 1.0 A
T
A
= 25°C − − 0.5
V
T
A
= 125°C − − 0.39
I
F
= 2.0 A
T
A
= 25°C − − 0.6
T
A
= 125°C − − 0.53
Voltage Rate of Change dV/dt V
R
= 20 V − 10,000 −
V/ms
P1-P3P4-P6P7-P8

NTTD4401FR2

Mfr. #:
Buy NTTD4401FR2
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 20V 2.4A 8MICRO
Lifecycle:
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