IXFQ60N60X Datasheet IXFH60N60X, IXFQ60N60X | P1-P3

DS100656A(5/15)

X-Class HiPerFET

TM

Power MOSFET

IXFQ60N60X

IXFH60N60X

V

DSS

= 600V

I

D25

= 60A

R

DS(on)



 55m





Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 2.5 4.5 V

I

GSS

V

GS

= 30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 A

T

J

= 125C 1.25 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 55 m

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 600 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 600 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C60A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

120 A

I

A

T

C

= 25C30A

E

AS

T

C

= 25C 2.5 J

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150°C 50 V/ns

P

D

T

C

= 25C 890 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13 / 10 Nm/lb.in

Weight TO-3P 5.5 g

TO-247 6.0 g

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D

D (Tab)

TO-3P (IXFQ)

D

G

S

D (Tab)

Features



International Standard Packages



Low R

DS(ON)

and Q

G



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFQ60N60X

IXFH60N60X

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

I

S

V

GS

= 0V 60 A

I

SM

Repetitive, pulse Width Limited by T

JM

240 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

200 ns

Q

RM

1.9 μC

I

RM

18.5 A

I

F

= 30A, -di/dt = 100A/μs

V

R

= 100V

TO-247 Outline

R

L1

A2

Q

E

A

D

c

B

A

b

C

L

D

S

D2

E1

A2 A2 A2

e

0P1

ixys option

A1

b4

b2

D1

0P

O 0K M D B M

+

O J M C A M

+

1

2 3

4

+

PINS: 1 - Gate

2, 4 - Drain

3 - Source

TO-3P Outline

b

S

A

E

D1

b4

A1

L1

E1

+

c

D

0P

b2

A2

0P1

1 2 3

4

+

e

+

PINS: 1 - Gate

2, 4 - Drain

3 - Source

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 24 40 S

R

Gi

Gate Input Resistance 1.4 

C

iss

5800 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 4130 pF

C

rss

40 pF

C

o(er)

285 pF

C

o(tr)

930 pF

t

d(on)

27 ns

t

r

23 ns

t

d(off)

90 ns

t

f

13 ns

Q

g(on)

143 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

30 nC

Q

gd

70 nC

R

thJC

0.14 C/W

R

thCS

0.25 C/W

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2 (External)

Effective Output Capacitance

Energy related

Time related

V

GS

= 0V

V

DS

= 0.8 • V

DSS

IXFQ60N60X

IXFH60N60X

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

0 0.5 1 1.5 2 2.5 3 3.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

012345678

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

4V

Fig. 4. R

DS(on)

Normalized to I

D

= 30A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 30A

I

D

= 60A

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 5. R

DS(on)

Normalized to I

D

= 30A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

IXFQ60N60X

IXFQ60N60X

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