APT20F50B Datasheet APT20F50S, APT20F50B | P1-P3

N-Channel FREDFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

oz

g

in·lbf

N·m

Ratings

20

13

60

±30

405

10

Min Typ Max

290

0.43

0.15

-55 150

300

0.22

6.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Pulsed Drain Current

1

Gate-Source Voltage

Single Pulse Avalanche Energy

2

Avalanche Current,

Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-247 Package), 6-32 or M3 screw

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

ș

JC

R

ș

CS

T

J

,T

STG

T

L

W

T

Torque

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low t

rr

for high reliability

• Ultra low C

rss

for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

TO-247

D

3

PAK

APT20F50B

APT20F50S

500V, 20A, 0.30 Max,Trr  200nS

APT20F50B

APT20F50S

Power MOS 8

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

rr

, soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

rss

/C

iss

result in excellent noise immunity and low switching loss. The

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Microsemi Website - http://www.microsemi.com

050-8156 Rev D 8-2011

Static Characteristics T

J

= 25°C unless otherwise speci¿ ed

Dynamic Characteristics T

J

= 25°C unless otherwise speci¿ ed

Source-Drain Diode Characteristics

1

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2

Starting at T

J

= 25°C, L = 8.10mH, R

G

= 25, I

AS

= 10A.

3

Pulse test: Pulse Width < 380s, duty cycle < 2%.

4

C

o(cr)

is de¿ ned as a ¿ xed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is de¿ ned as a ¿ xed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -1.05E-7/V

DS

^2 + 2.44E-8/V

DS

+ 6.99E-11.

6

R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speci¿ cations and information contained herein.

G

D

S

Unit

V

V/°C



V

mV/°C

A

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

C

A

V/ns

Min Typ Max

500

0.60

0.25 0.30

2.5 4 5

-10

100

500

±100

Min Typ Max

20

60

1.0

175 200

310 370

0.62

1.47

6.6

8.9

20

Min Typ Max

14

2950

40

320

185

95

75

17

34

13

15

34

11

Test Conditions

V

GS

= 0V, I

D

= 250A

Reference to 25°C, I

D

= 250A

V

GS

= 10V, I

D

= 10A

V

GS

= V

DS

, I

D

= 0.5mA

V

DS

= 500V T

J

= 25°C

V

GS

= 0V T

J

= 125°C

V

GS

= ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 10, T

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

= 10A

3

T

J

= 25°C

di

SD

/dt = 100A/s T

J

= 125°C

V

DD

= 100V T

J

= 25°C

T

J

= 125°C

I

SD

 10A, di/dt 1000A/s, V

DD

= 333V,

T

J

= 125°C

Test Conditions

V

DS

= 50V, I

D

= 10A

V

GS

= 0V, V

DS

= 25V

f = 1MHz

V

GS

= 0V, V

DS

= 0V to 333V

V

GS

= 0 to 10V, I

D

= 10A,

V

DS

= 250V

Resistive Switching

V

DD

= 333V, I

D

= 10A

R

G

= 10

6

, V

GG

= 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coef¿ cient

Drain-Source On Resistance

3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coef¿ cient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

¨V

BR(DSS)

/¨T

J

R

DS(on)

V

GS(th)

¨V

GS(th)

/¨T

J

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

050-8156 Rev D 8-2011

AP20F50B_S

V

GS

= 7 &10V

5.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

6V

5V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250SEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 10A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 10A

V

DS

= 400V

V

DS

= 100V

V

DS

= 250V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 150°C

T

J

= 25°C

T

J

= 125°C

T

J

= 150°C

C

rss

6.5V

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT(A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Drain Current vs Source-to-Drain Voltage

0 5 10 15 20 25 0 5 10 15 20 25 30

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500

0 20 40 60 80 100 120 0 0.3 0.6 0.9 1.2 1.5

70

60

50

40

30

20

10

0

2.5

2.0

1.5

1.0

0.5

0

25

20

15

10

5

0

16

14

12

10

8

6

4

2

0

35

30

25

20

15

10

5

0

60

50

40

30

20

10

0

4,000

1,000

100

10

60

50

40

30

20

10

0

050-8156 Rev D 8-2011

APT20F50B_S

APT20F50B

APT20F50B

Products related to this Datasheet