RT8206A/B
11
DS8206A/B-06 August 2011 www.richtek.com
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Note 2. θ
JA
is measured in the natural convection at T
A
= 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. P
VIN
+ P
PVCC
Parameter Symbol Test Conditions Min Typ Max Unit
Low Level (DEM) -- -- 0.8
REF Level (Ultrasonic Mode) 1.8 -- 2.3
SKIP Input Voltage
High Level (PWM Mode) 2.5 -- --
V
V
OUT1
/ V
OUT2
(400kHz / 500kHz) -- -- 0.8
V
OUT1
/ V
OUT2
(300kHz / 375kHz) 1.8 -- 2.3
TON Setting Voltage
V
OUT1
/ V
OUT2
(200kHz / 250kHz) 2.5 -- --
V
Clear Fault Level / SMPS Off Level -- -- 0.8
Delay Start 1.8 -- 2.3
ENx Input Voltage
SMPS On Level 2.5 -- --
V
Rising Edge 1.2 1.6 2.0
ENLDO Input Voltage V
ENLDO
Falling Edge 0.94 1 1.06
V
ENLDO = 0V or 25V −1 -- +3
ENx = 0V or 5V −1 -- +1
TON, SKIP = 0V or 5V
−1 -- +1
FBx = 0V or 5V −1 -- +1
Input Leakage Current
SECFB = 0V or 5V (RT8206A) −1 -- +1
μA
Internal BOOT Switch
Internal Boost Charging
Switch On-Resistance
PVCC to BOOTx -- 20 -- Ω
Power MOSFET Drivers
UGATEx Driver Sink/Source
Current
UGATEx Forced to 2V -- 2 -- A
LGATEx Driver Source
Current
LGATEx Forc ed to 2V -- 1.7 -- A
LGATEx Driver Sink Current LGATEx Forced to 2V -- 3.3 -- A
UGATEx On-Resistance BOOTx to PHASEx Forced to 5V -- 1.5 4 Ω
LGATEx, High State -- 2.2 5
LGATEx On-Resistance
LGATEx, Low State -- 0.6 1.5
Ω
LG Rising -- 30 --
Dead Time
UG Rising -- 40 --
ns