GE 1 Form B (AQV414E, AQV41❍EH)
–4–
ASCTB127E 201404-T
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
9. Off state leakage current vs. load voltage
characteristics
Sample: All types;
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25°C 77°F
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
0.2
0
0.4
0.6
-0.2
-0.4
-0.6
-1
-0.5
0.50 1
AQV412EH
Voltage, V
Current, A
Off state leakage current, A
2006040 80 100
Load voltage, V
10
–3
10
–6
10
–9
10
–12
AQV410EH
AQV412EH
AQV414EH
AQV414E
Operate (OFF) time, ms
0
2.0
4.0
6.0
8.0
LED forward current, mA
10.0
10 20 30 40
50
AQV414E
AQV410EH
AQV414EH
AQV412EH
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25°C 77°F
Reverse (ON) time, ms
LED forward current, mA
10 20 30 40 50 60100 2030405060
0.5
0.4
0.3
0.2
0.1
0
AQV414E
AQV410EH,AQV414EH
AQV412EH
Output capacitance, pF
0
400
300
200
100
Applied voltage, V
10 20 30 40 50 60
500
AQV412EH
AQV410EH,AQV414EH,AQV414E
