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FESE8GT-E3/45

P1-P3P4-P4
FESE8AT thru FESE8GT
www.vishay.com
Vishay General Semiconductor
Revision: 30-Jan-13
1
Document Number: 89982
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Low leakage current
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commerical grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
8.0 A
V
RRM
50 V to 400 V
I
FSM
125 A
t
rr
35 ns, 50 ns
V
F
0.95 V, 1.30 V
T
J
max. 150 °C
CASE
PIN 2
PIN 1
TO-220AC
FESE8XT
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT
UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 300 400 V
Maximum RMS voltage V
RMS
35 70 105 140 210 280 V
Maximum DC blocking voltage V
DC
50 100 150 200 300 400 V
Maximum average forward
rectified current at T
C
= 100 °C
I
F(AV)
8.0 A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
I
FSM
125 A
Operating storage and temperature range T
J
, T
STG
- 55 to + 150 °C
FESE8AT thru FESE8GT
www.vishay.com
Vishay General Semiconductor
Revision: 30-Jan-13
2
Document Number: 89982
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT UNIT
Maximum
instantaneous
forward voltage
8.0 A V
F
(1)
0.95 1.30 V
Maximum DC reverse
current
at rated
V
R
T
C
= 25 °C
I
R
(2)
10
μA
T
C
= 100 °C 500
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 50 ns
Typical junction
capacitance
4.0 V, 1 MHz C
J
85 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT UNIT
Typical thermal resistance
R
JC
2.2
°C/W
R
JA
(1)
50
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC FESE8GT-E3/45 1.86 45 50/tube Tube
0
50
100
150
0
2
4
6
8
10
Heatsink, Case Temperature, T
C
Free Air, Ambient Temperature, T
A
Resistive or Inductive Load
Average Forward Rectified Current (A)
Temperature (°C)
1
10
100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
FESE8AT thru FESE8GT
www.vishay.com
Vishay General Semiconductor
Revision: 30-Jan-13
3
Document Number: 89982
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.2
0.6
1.0
1.4
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
50 - 200 V
300 - 400 V
Pulse Width = 300 µs
1 % Duty Cycle
2.0
0.4
0.8
1.2
1.6
T
J
= 25 °C
T
J
= 125 °C
0
20
40
60
80
100
0.01
0.1
1
10
100
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.415 (10.54)
Max.
0.113 (2.87)
0.103 (2.62)
0.159 (4.04)
0.143 (3.64)
0.060 (1.50)
0.047 (1.20)
0.260 (6.6)
0.236 (6.0)
0.185 (4.70)
0.175 (4.44)
0.040 (0.84)
0.024 (0.62)
0.20 (5.08)
Pin 1
Pin 2
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.160 (4.06)
0.140 (3.56)
12
P1-P3P4-P4

FESE8GT-E3/45

Mfr. #:
Buy FESE8GT-E3/45
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers RECOMMENDED ALT 78-VS-ETU0805-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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