RN2601~RN2606
2001-06-05
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2601,RN2602,RN2603
RN2604,RN2605,RN2606
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1601~1606
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25°
°°
°C) (Q1, Q2 Common)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage
RN2601~2606
V
CEO
−50 V
RN2601~2604 −10
Emitter-base voltage
RN2605, 2606
V
EBO
−5
V
Collector current I
C
−100 mA
Collector power dissipation P
C
*
300 mW
Junction temperature T
j
150 °C
Storage temperature range
RN2601~2606
T
stg
−55~150 °C
* Total rating
JEDEC
―
EIAJ
―
TOSHIBA
2-3N1A
Wei
ht: 0.015
Type No. R1 (kΩ)R2 (kΩ)
RN2601 4.7 4.7
RN2602 10 10
RN2603 22 22
RN2604 47 47
RN2605 2.2 47
RN2606 4.7 47
Unit in mm
