FCD360N65S3R0
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
0.2 1 10 20
0.1
1
10
50
*Notes:
1. 250 ms Pulse Test
2. T
C
= 25
o
C
I
D
, Drain Current[A]
V , Drain−Source Voltage[V]
V
GS
= 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
0.1
1
10
50
−55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate−Source Voltage[V]
0.001
0.01
0.1
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
s Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
−55
o
C
0.1
0.2
0.3
0.4
0.5
0.6
*Note: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
,
Drain−Source On−Resistance [ ]
I
D
, Drain Current [A]
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
100000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain−Source Voltage [V]
0
2
4
6
8
10
V
DS
= 400V
V
DS
= 130V
*Note: I
D
= 5A
V
GS
, Gate−Source Voltage [V]
Q
g
, Total Gate Charge [nC]
DS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
m
m
W
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0 5 10 15 20 25
0.0 0.5 1.51.0
0 5 10 15 20
