NTMFD4901NFT1G

NTMFD4901NF
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbolFET
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Q1
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1150
pF
Q2 2950
Output Capacitance
Q1
C
OSS
360
Q2 1100
Reverse Capacitance
Q1
C
RSS
105
Q2 82
Total Gate Charge
Q1
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 10 A
9.7
nC
Q2 20
Threshold Gate Charge
Q1
Q
G(TH)
1.1
Q2 2.7
Gate−to−Source Charge
Q1
Q
GS
3.3
Q2 7.3
Gate−to−Drain Charge
Q1
Q
GD
3.7
Q2 5.3
Total Gate Charge
Q1
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 10 A
19.1
nC
Q2 42.7
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Q1
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 10 A, R
G
= 3.0 W
9.0
ns
Q2 14
Rise Time
Q1
t
r
15
Q2 16
Turn−Off Delay Time
Q1
t
d(OFF)
14
Q2 25
Fall Time
Q1
t
f
4.0
Q2 7.0
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Q1
t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 10 A, R
G
= 3.0 W
6.0
ns
Q2 10
Rise Time
Q1
t
r
14
Q2 15
Turn−Off Delay Time
Q1
t
d(OFF)
17
Q2 32
Fall Time
Q1
t
f
3.0
Q2 5.0
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFD4901NF
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbolFET
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Voltage
Q1
V
SD
V
GS
= 0 V,
I
S
= 3 A
T
J
= 25°C 0.75 1.0
V
T
J
= 125°C 0.62
Q2
V
GS
= 0 V,
I
S
= 2 A
T
J
= 25°C 0.45 0.70
T
J
= 125°C 0.37
Reverse Recovery Time
Q1
t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms, I
S
= 3 A
23
ns
Q2 40
Charge Time
Q1
ta
12
Q2 21
Discharge Time
Q1
tb
11
Q2 19
Reverse Recovery Charge
Q1
Q
RR
12
nC
Q2 40
PACKAGE PARASITIC VALUES
Source Inductance
Q1
L
S
T
A
= 25°C
0.38
nH
Q2 0.65
Drain Inductance
Q1
L
D
0.054
nH
Q2 0.007
Gate Inductance
Q1
L
G
1.5
nH
Q2 1.5
Gate Resistance
Q1
R
G
0.8
W
Q2 0.8
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
NTMFD4901NFT1G DFN8
(Pb−Free)
1500 / Tape & Reel
NTMFD4901NFT3G DFN8
(Pb−Free)
5000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTMFD4901NF
http://onsemi.com
6
TYPICAL CHARACTERISTICS − Q1
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
10
20
25
5
30
43210
0
5
10
25
30
40
50
Figure 3. On−Resistance vs. Gate−to−Source
Resistance
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
981076542
0.002
0.006
0.008
0.010
0.014
0.016
0.020
3025201050
0.003
0.004
0.005
0.006
0.008
0.009
0.010
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
1.2
1.4
1.6
1.8
30252015100
10
100
1,000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
15
35
40
T
J
= 25°C
V
GS
= 2.4 V
3.0 V
3.2 V
2.8 V
4.5 V
10 V
T
J
= 25°C
V
DS
5 V
T
J
= 125°C
T
J
= −55°C
15
20
35
45
0.004
0.012
0.018
I
D
= 10 A
T
J
= 25°C
15 4035
0.007
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
150
I
D
= 10 A
V
GS
= 10 V
0.8
1.0
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
3
5
3.4 V
3.6 V
3.8 V

NTMFD4901NFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 10.8A 7MO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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