IRF6612TR1PBF

IRF6612PbF
4 www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
0.1 1 10
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
BOTTOM 2.7V
60µs PULSE WIDTH
Tj = 25°C
2.7V
0.1 1 10
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
BOTTOM 2.7V
0 1 2 3 4 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 10V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 25A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
IRF6612PbF
www.irf.com 5
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig10. Maximum Safe Operating Area
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. Threshold Voltage vs. Temperature
25 50 75 100 125 150
Starti ng T
J
, Junction Temperature (°C)
0
25
50
75
100
125
150
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 5.3A
6.2A
BOTTOM 19A
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, Source-to-Drain Vol tage (V)
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
T
A
= 25°C
Tj = 150°C
Single Pulse
IRF6612PbF
6 www.irf.com
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 15b. Unclamped Inductive Waveforms
t
p
V
(BR)DSS
I
AS
Fig 15a. Unclamped Inductive Test Circuit
Fig 16b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 16a. Switching Time Test Circuit
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
15V
20V
V
GS

IRF6612TR1PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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