IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
20
24
28
32
36
40
44
48
-44-42-40-38-36-34-32-30-28-26-24-22
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
50
100
150
200
250
0 2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 75V
I
D
= - 44A, - 22A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
15
16
17
18
19
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
I
D
= - 22A
I
D
= - 44A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
40
45
50
55
60
65
-44-42-40-38-36-34-32-30-28-26-24-22
I
D
- Amperes
t
f
- Nanoseconds
14
15
16
17
18
19
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
T
J
= 25ºC
T
J
= 125ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
18
22
26
30
34
38
42
46
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
I
D
= - 22A
I
D
= - 44A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
30
60
90
120
150
180
210
240
270
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 75V
I
D
= - 22A
I
D
= - 44A
