IXTQ44P15T Datasheet IXTH44P15T, IXTP44P15T, IXTA44P15T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C - 150 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ - 150 V

V

GSS

Continuous ±15 V

V

GSM

Transient ±25 V

I

D25

T

C

= 25°C - 44 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

-130 A

I

A

T

C

= 25°C - 22 A

E

AS

T

C

= 25°C1J

P

D

T

C

= 25°C 298 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-220, TO-247 & TO-3P) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-3P 5.5 g

TO-247 6.0 g

DS100023B(01/13)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= - 250μA -150 V

V

GS(th)

V

DS

= V

GS

, I

D

= - 250μA - 2.0 - 4.0 V

I

GSS

V

GS

= ±15V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V - 15 μA

T

J

= 125°C - 750 μA

R

DS(on)

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note 1 65 mΩ

TrenchP

TM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA44P15T

IXTP44P15T

IXTQ44P15T

IXTH44P15T

V

DSS

= - 150V

I

D25

= - 44A

R

DS(on)

≤≤

≤ 65m

ΩΩ

Ω

Features

z

International Standard Packages

z

Avalanche Rated

z

Extended FBSOA

z

Fast Intrinsic Diode

z

Low R

DS(ON)

and Q

G

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High-Side Switching

z

Push Pull Amplifiers

z

DC Choppers

z

Automatic Test Equipment

z

Current Regulators

z

Battery Charger Applications

G

D

S

TO-220AB (IXTP)

D (Tab)

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

D

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

TO-3P (IXTQ)

D

G

S

Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA44P15T IXTP44P15T

IXTQ44P15T IXTH44P15T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note 1 27 45 S

C

iss

13.4 nF

C

oss

V

GS

= 0V, V

DS

= - 25V, f = 1MHz 675 pF

C

rss

183 pF

t

d(on)

25 ns

t

r

42 ns

t

d(off)

50 ns

t

f

17 ns

Q

g(on)

175 nC

Q

gs

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

65 nC

Q

gd

58 nC

R

thJC

0.42 °C/W

R

thCS

TO-220 0.50 °C/W

TO-247 & TO-3P 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V - 44 A

I

SM

Repetitive, Pulse Width Limited by T

JM

-176 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 -1.3 V

t

rr

140 ns

Q

RM

0.87 μC

I

RM

-12.4 A

Resistive Switching Times

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

I

F

= - 22A, -di/dt = -100A/μs

V

R

= - 75V, V

GS

= 0V

IXTA44P15T IXTP44P15T

IXTQ44P15T IXTH44P15T

TO-263 Outline

TO-3P Outline

Pins: 1 - Gate 2,4 - Drain

3 - Source

TO-247 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

1 = Gate

2 = Drain

3 = Source

IXTQ44P15T

IXTQ44P15T

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