PROPRIETARY AND
CONFIDENTIAL
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS75040A 12/11
Data Sheet
www.microchip.com
Features
• Gain:
– Typically 12 dB gain across 2.4–2.5 GHz for Receiver
(RX) chain.
– Typically 29 dB gain across 2.4–2.5 GHz over temperature
0°C to +80°C for Transmitter (TX) chain.
• Low-Noise Figure
– Typical 1.45 dB across 2.4–2.55 GHz
•50 Input/Output matched along RX chain.
• Rx IIP3
– >1 dbm across 2.4–2.55 GHz
• High linear output power:
– >26.5 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
– ~3% added EVM up to 19 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~22%/210 mA @ P
OUT
= 22 dBm for 802.11g
– ~26%/240 mA @ P
OUT
= 23.5 dBm for 802.11b
• Low idle current
– ~70 mA I
CQ
• Low shut-down current (Typical 2.5 µA)
• Built-in, Ultra-low I
REF
power-up/down control
–I
REF
<4 mA
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Simple input/output matching
• Single positive power supply
• Packages available
– 24-contact WQFN – 4mm x 4mm
• All devices are RoHS compliant
Applications
• WLAN
• Bluetooth
• Wireless Network
2.4 GHz Front-End Module
SST12LF01
The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-per-
formance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in
compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT
technology, the SST12LF01 operates within the frequency range of 2.4- 2.55 GHz
at a very low DC-current consumption. The Transmitter chain has excellent linear-
ity, typically <3% added EVM up to 19 dBm output power, which is essential for 54
Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The
SST12LF01 is offered in a 24-contact WQFN package.
