+125
O
C
TSTG
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
VF V
Reverse current
Capacitance between terminals
VR = 1V, f = 1 MHZ
IR
CT
uA
pF
14
10
CDBQC0130L-HF
QW-G1113
Maximum Rating (at TA=25°C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Page 1
Typ
IO
VR
VRRM
Average forward rectified current
Reverse voltage
Repetitive Peak reverse voltage
Peak forward surge current
Symbol
Parameter
Conditions Min
Max
Unit
V
V
mA
100
30
35
Tj
Storage temperature range
Junction temperature range
O
C
+125
-40
IFSM
8.3 ms single half sine-wave
(1 cyc)
3
A
REV:C
Io = 100 mA
VR = 30 Volts
RoHS Device
Halogen Free
°C/W
200
Thermal resistance
Junction to ambient
RΘJA
Mechanical data
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any
- Weight: 0.001 grams(approx.).
- Case: 0402C/SOD-923F standard package,
molded plastic.
- Polarity: Cathode band & BP
Circuit Diagram
Features
- Low forward voltage.
- Designed for mounting on small surface.
- Extremely thin package.
- Majority carrier conduction.
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
IF = 10mA
0.30
VR = 10V
0.25
20
-40
Low VF SMD Schottky Barrier Diode
Dimensions in inches and (millimeter)
0402C/SOD-923F
0.022(0.55)
0.018(0.45)
0.001(0.02)
Max.
0.041(1.05)
0.037(0.95)
0.026(0.65)
BSC.
0.012(0.30)
0.008(0.20)
0.022(0.55)
0.018(0.45)
0.026(0.65)
0.022(0.55)
