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TK13A65U(STA4,Q,M)

P1-P3P4-P6
TK13A65U
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK13A65U
Switching Regulator Applications
• Low drain-source ON resistance: R
DS (ON)
= 0.32 Ω (typ.)
• High forward transfer admittance: ⎪Y
fs
⎪ = 8.0 S (typ.)
• Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 650 V)
• Enhancement-mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
650 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
13
Drain current
Pulse (Note 1) I
DP
26
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
86 mJ
Avalanche current I
AR
13 A
Repetitive avalanche energy (Note 3) E
AR
4.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
3.125 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25 °C (initial), L = 0.9 mH, R
G
= 25 Ω, I
AR
= 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Ф3.2
±
0.2
10 ± 0.3
2.7 ± 0.2
A
1.14 ± 0.15
0.69 ± 0.15
2.54
3.0
3.9
15.0 ± 0.3 13 ± 0.5
2.8 MAX.
2.54
4.5 ± 0.2
1 2 3
0.64 ± 0.15
2.6 ± 0.1
M
Ф0.2
A
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
Internal Connection
1: Gate
2: Drain
3: Source
Start of commercial production
2009-03
TK13A65U
2013-11-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±30 V, V
DS
= 0 V ⎯ ⎯ ±1 μA
Drain cut-off current I
DSS
V
DS
= 650 V, V
GS
= 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 650 ⎯ ⎯ V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 3.0 ⎯ 5.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 6.5 A ⎯ 0.32 0.38
Ω
Forward transfer admittance |Y
fs
| V
DS
= 10 V, I
D
= 6.5 A 2.0 8.0 ― S
Input capacitance C
iss
― 950 ―
Reverse transfer capacitance C
rss
― 47 ―
Output capacitance C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
― 2300 ―
pF
Rise time t
r
⎯ 30 ⎯
Turn-ON time t
on
⎯ 65 ⎯
Fall time t
f
⎯ 8 ⎯
Switching time
Turn-OFF time t
off
Duty ≤ 1%, t
w
= 10 μs
⎯
80 ⎯
ns
Total gate charge Q
g
⎯ 17 ⎯
Gate-source charge Q
gs
⎯ 10 ⎯
Gate-drain charge Q
gd
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 13 A
⎯ 7 ⎯
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1)
I
DR
⎯ ⎯ ⎯ 13 A
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ 26 A
Forward voltage (diode) V
DSF
I
DR
= 13 A, V
GS
= 0 V ⎯ ⎯ −1.7
V
Reverse recovery time t
rr
⎯ 430 ⎯ ns
Reverse recovery charge Q
rr
I
DR
= 13 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
⎯ 7.0 ⎯ μC
Marking
Lot No.
K13A65U
Part No.
(or abbreviation code)
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
`G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
R
L
= 31 Ω
0 V
10 V
V
GS
V
DD
≈ 200 V
I
D
= 6.5 A V
OUT
50 Ω
TK13A65U
2013-11-01
3
Tc = −55°C
25
100
10
8
7.3
7.5
V
GS
= 6 V
7
6.5
8
7
7.5
7.3
V
GS
= 6 V
6.8
6.5
10
10
100
V
GS
= 10 V
10 1
0.1
1
0.1
100
10
0.1 100 10
1
1
0
10
2
4
8
40
20
12 16
6
8
6.5
3.3
I
D
= 13 A
0
20
4
8
16
2
0 10
6 8
12
4
100
25
Tc = −55°C
0
25
5
15
10
20
100
50
20 30 40
0
15
3
9
6
12
2 0
10
4 6 8
I
D
– V
DS
Drain current I
D
(A)
Drain−source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain
−
source voltage V
DS
(V)
Common source
Tc = 25°C
Pulse test
I
D
– V
GS
Drain current I
D
(A)
Gate−source voltage V
GS
(V)
V
DS
– V
GS
Drain−source voltage V
DS
(V)
Gate
−
source voltage V
GS
(V)
⎪Y
fs
⎪ − I
D
Forward transfer admittance
⎪Y
fs
⎪ (S)
Drain current I
D
(A)
R
DS (ON)
− I
D
Drain−source ON-resistance
R
DS (ON)
(Ω)
Drain current I
D
(A)
Common source
Tc = 25°C
Pulse test
Common source
V
DS
= 10 V
Pulse test
Common source
V
DS
= 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
0.1
P1-P3P4-P6

TK13A65U(STA4,Q,M)

Mfr. #:
Buy TK13A65U(STA4,Q,M)
Manufacturer:
Toshiba
Description:
MOSFET N-Ch FET RDS .32Ohm Yfs 8.0s VDS 650V
Lifecycle:
New from this manufacturer.
Delivery:
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