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MKI100-12E8

P1-P3P4-P4
© 2007 IXYS All rights reserved
4 - 4
MWI 100-12 E8
MKI 100-12 E8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
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8
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0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
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8
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16
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E
off
t
d(off)
E
off
t
d(off)
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
t
ns
t
I
CM
K/W
Z
thJC
V
A
mJ
nsmJ
ns
t
r
E
on
t
r
single pulse
diode
IGBT
ns
E
on
MWI100-12E8
t
d(on)
t
f
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 12 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 12 Ω
T
VJ
= 125°C
R
G
= 12 Ω
T
VJ
= 125°C
t
d(on)
t
f
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
p h a s e - o u t
P1-P3P4-P4

MKI100-12E8

Mfr. #:
Buy MKI100-12E8
Manufacturer:
Description:
MOD IGBT H-BRIDGE 1200V 165A E3
Lifecycle:
New from this manufacturer.
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