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IRGSL30B60KPBF

P1-P3P4-P6P7-P9P10-P12P13-P14
INSULATED GATE BIPOLAR TRANSISTOR
05/17/05
www.irf.com 1
IRGB30B60KPbF
IRGS30B60KPbF
IRGSL30B60KPbF
V
CES
= 600V
I
C
= 50A, T
C
=100°C
at T
J
=175°C
t
sc
> 10µs, T
J
=150°C
V
CE(on)
typ. = 1.95V
Features
• Low VCE (on) Non Punch Through IGBT Technology
• 10µs Short Circuit Capability
• Square RBSOA
• Positive VCE (on) Temperature Coefficient
• Maximum Junction Temperature rated at 175°C
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
D
2
Pak
IRGS30B60KPbF
TO-220AB
IRGB30B60KPbF
TO-262
IRGSL30B60KPbF
E
C
G
n-channel
PD - 97003
* R
θJC
(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current
78
I
C
@ T
C
= 100°C
Continuous Collector Current 50 A
I
CM
Pulse Collector Current (Ref.Fig.C.T.5) 120
I
LM
Clamped Inductive Load current
120
V
ISOL
RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V
V
GE
Gate-to-Emitter Voltage ±20
P
D
@ T
C
= 25°C
Maximum Power Dissipation 370 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 180
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
R
θ
JC
Junction-to-Case- IGBT ––– ––– 0.41* °C/W
R
θ
CS
Case-to-Sink, flat, greased surface ––– 0.50 –––
R
θ
JA
Junction-to-Ambient, typical socket mount
––– ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount, Steady State)
––– ––– 40
Wt
Weight ––– 1.44 ––– g
IRGB/S/SL30B60KPbF
2 www.irf.com
Note to are on page 13
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600——V
V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/
∆T
J
Temperature Coeff. of Breakdown Volta
g
e —0.40—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
—1.952.35
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Voltage — 2.40 2.75 V
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
8,9,10
— 2.6 2.95
I
C
= 30A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5 V
V
CE
= V
GE
, I
C
= 250µA
8,9,10
∆V
GE(th)
/
∆T
J
Threshold Voltage temp. coefficient — -10 — mV/°
C
V
CE
= V
GE
, I
C
= 1.0mA (25°C-150°C)
11
gfe Forward Transconductance — 18 — S
V
CE
= 50V, I
C
= 50A, PW = 80µs
—5.0250
V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current — 1000 2000 µA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
—18303000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V, V
CE
= 0V
Switchin
g
Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
Q
g
Total Gate Charge (turn-on) — 102 153
I
C
= 30A
17
Q
ge
Gate-to-Emitter Charge (turn-on) — 14 21 nC
V
CC
= 400V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 44 66
V
GE
= 15V
E
on
Turn-On Switching Loss — 350 620
I
C
= 30A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 825 955 µJ
V
GE
= 15V, R
G
= 10
Ω
, L = 200µH
E
tot
Total Switching Loss — 1175 1575
T
J
= 25°C
t
d(on)
Turn-On delay time — 46 60
I
C
= 30A, V
CC
= 400V
t
r
Rise time — 28 39 ns
V
GE
= 15V, R
G
= 10Ω, L = 200µH
CT4
t
d(off)
Turn-Off delay time — 185 200
T
J
= 25°C
t
f
Fall time — 31 40
E
on
Turn-On Switching Loss — 635 1085
I
C
= 30A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 1150 1350 µJ
V
GE
= 15V, R
G
= 10Ω, L = 200µH
12,14
E
tot
Total Switching Loss — 1785 2435
T
J
= 150°C
WF1,WF2
t
d(on)
Turn-On delay time — 46 60
I
C
= 30A, V
CC
= 400V
13,15
t
r
Rise time — 28 39 ns
V
GE
= 15V, R
G
= 10
Ω
, L = 200µH
CT4
t
d(off)
Turn-Off delay time — 205 235
T
J
= 150°C
WF1
t
f
Fall time — 32 42 WF2
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 1750 2500
V
GE
= 0V
C
oes
Output Capacitance — 160 255 pF
V
CC
= 30V
16
C
res
Reverse Transfer Capacitance — 60 90 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
T
J
= 150°C, I
C
= 120A, Vp = 600V
4
V
CC
=500V,V
GE
= +15V to 0V,R
G
=10
Ω
CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs
T
J
= 150°C, Vp = 600V, R
G
= 10Ω
CT3
V
CC
=360V,V
GE
= +15V to 0V
WF3
I
SC
(Peak)
Peak Short Circuit Collector Current — 200 — A
WF3
IRGB/S/SL30B60KPbF
www.irf.com 3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25°C; T
J
≤ 150°C
Fig. 4 - Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
1 10 100 1000 10000
V
CE
(V)
0.1
1
10
100
1000
I
C
(
A
)
10 µs
100 µs
1ms
DC
10 100 1000
V
CE
(V)
1
10
100
1000
I
C
A
)
0 20 40 60 80 100 120 140 160 180
T
C
(°C)
0
10
20
30
40
50
60
70
80
I
C
(
A
)
0 20 40 60 80 100 120 140 160 180
T
C
(°C)
0
50
100
150
200
250
300
350
400
P
t
o
t
(
W
)
P1-P3P4-P6P7-P9P10-P12P13-P14

IRGSL30B60KPBF

Mfr. #:
Buy IRGSL30B60KPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast 10-30kHz IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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