FJAF4310RTU Datasheet FJAF4310RTU, FJAF4310YTU | P1-P3

FJAF4310 — NPN Epitaxial Silicon Transistor

FJAF4310 Rev. B0 1

October 2009

FJAF4310

NPN Epitaxial Silicon Transistor

Features

• Audio Power Amplifier

• High Current Capability : I

C

=10A

• High Power Dissipation

•Wide S.O.A

• Complement to FJAF4210

Absolute Maximum Ratings* T

A

=25°C unless otherwise noted

Electrical Characteristics T

A

=25°C unless otherwise noted

* Pulse Test : PW=20μs

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 200 V

V

CEO

Collector-Emitter Voltage 140 V

V

EBO

Emitter-Base Voltage 6 V

I

C

Collector Current (DC) 10 A

I

B

Base Current (DC) 1.5 A

P

C

Collector Dissipation (T

C

=25°C) 80 W

R

θJC

Junction to Case 1.48 °C/W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=5mA, I

E

=0 200 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=50mA, R

BE

=∞ 140 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=5mA, I

C

=0 6 V

I

CBO

Collector Cut-off Current V

CB

=200V, I

E

=0 10 μA

I

EBO

Emitter Cut-off Current V

EB

=6V, I

C

=0 10 μA

h

FE

* DC Current Gain V

CE

=4V, I

C

=3A 50 180

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=5A, I

B

=0.5A 0.5 V

C

ob

Output Capacitance V

CB

=10V, f=1MHz 250 pF

f

T

Current Gain Bandwidth Product V

CE

=5V, I

C

=1A 30 MHz

Classification R O Y

h

FE

50 ~ 100 70 ~ 140 90 ~ 180

TO-3PF

1.Base 2.Collector 3.Emitter

1

FJAF4310 — NPN Epitaxial Silicon Transistor

FJAF4310 Rev. B0 2

Typical Perpormance Characteristics

Figure 1. Static Characterstic Figure 2. DC current Gain

Figure 3. V

CE

(sat) vs. I

B

Characteristics Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area

01234

0

1

2

3

4

5

6

7

8

9

10

I

B

= 400mA

I

B

= 300mA

I

B

= 20mA

I

B

= 250mA

I

B

= 200mA

I

B

= 150mA

I

B

= 100mA

I

B

= 50mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10

10

100

1000

V

CE

= 4 V

Ta = 25

o

C

Ta = 125

o

C

Ta = - 25

o

C

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.0 0.4 0.8 1.2 1.6 2.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I

C

= 10A

I

C

= 5A

V

CE

(sat) [V], SATURATION VOLTAGE

I

B

[A], BASE CURRENT

0.01 0.1 1 10

0.01

0.1

1

I

C

= 10 I

B

Ta = 25

o

C

Ta = 125

o

C

Ta = - 25

o

C

V

CE

(sat) [V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.0 0.5 1.0 1.5

0

2

4

6

8

10

V

CE

= 4 V

Ta = 25

o

C

Ta = 125

o

C

Ta = - 25

o

C

I

C

[A], COLLECTOR CURRENT

V

BE

[V], Base-Emitter On VOLTAGE

0.1 1 10 100

0.1

1

10

t=100ms

t=10ms

T

C

=25

o

C

Single Pulse

I

C

(DC)

I

C

(Pulse)

Ic [A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

FJAF4310 — NPN Epitaxial Silicon Transistor

FJAF4310 Rev. B0 3

Typical Perpormance Characteristics (Continued)

Figure 7. Power Derating

0 25 50 75 100 125 150 175

0

20

40

60

80

100

P

C

[W], COLLECTOR POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

FJAF4310RTU

FJAF4310RTU

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