VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3
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Vishay General Semiconductor
Revision: 14-Dec-16
1
Document Number: 89131
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 2.5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
60 V
I
FSM
100 A
V
F
at I
F
= 5.0 A 0.50 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
TMBS
®
ITO-220AB
1
2
3
VT1060C
VFT1060C
VIT1060CVBT1060C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT1060C VFT1060C VBT1060C VIT1060C UNIT
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum average forward rectified current (fig. 1)
per
device
I
F(AV)
10
A
per
diode
5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
100
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH E
AS
65 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C I
RRM
1.0 A
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C