1999 Aug 11 2
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2001
FEATURES
Low current, low voltage
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Supply and RF output pin combined.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Low noise amplifiers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN DESCRIPTION
1GND
2RF in
3GND
4V
S
+RFout
handbook, halfpage
Top view
MAM430
21
43
BIAS
CIRCUIT
RFin GND
V
S
+RFout
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: A1.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage RF input AC coupled 4.5 V
I
S
DC supply current V
VS-OUT
= 2.5 V; RF input AC coupled 4.5 mA
MSG maximum stable gain V
VS-OUT
= 2.5 V; f = 1.8 GHz;
T
amb
=25C
19.5 dB
NF noise figure V
VS-OUT
= 2.5 V; f = 1.8 GHz;
S
=
opt
1.3 dB
