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ADG436BNZ

P1-P3P4-P6P7-P9P10-P12P13-P13
ADG436
Rev. B | Page 3 of 12
SPECIFICATIONS
DUAL SUPPLY
1
V
DD
= +15 V, V
SS
= −15 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter +25°C −40°C to +85°C Unit Test Conditions/ Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
R
ON
12 Ω typ V
D
= ±10 V, I
S
= −1 mA
25 Ω max
∆R
ON
1 Ω typ V
D
= −5 V, 5 V, I
S
= −10 mA
3 Ω max
R
ON
Match 1 Ω typ V
D
= ±10 V, I
S
= −10 mA
2.5 Ω max
LEAKAGE CURRENTS V
DD
= 16.5 V, V
SS
= −16.5 V
Source OFF Leakage I
S
(OFF) ±0.005 nA typ V
D
= ±15.5 V, V
S
= ±15.5 V
±0.25 ±5 nA max Figure 13
Channel ON Leakage I
D
, I
S
(ON) ±0.05 nA typ V
S
= V
D
= ±15.5 V
±0.4 ±5 nA max Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
±0.005 µA typ V
IN
= 0 V or V
DD
±0.5 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
70 ns typ R
L
= 300 Ω , C
L
= 35 pF;
125 ns max V
S
=±10 V; Figure 15
t
OFF
60 ns typ R
L
= 300 Ω , C
L
= 35 pF;
120 ns max V
S
= ±10 V; Figure 15
Break-Before-Make Delay, t
OPEN
10 ns min R
L
= 300 Ω , C
L
= 35 pF;
V
S
= +5 V; Figure 16
Charge Injection 10 pC typ V
D
= 0 V, R
D
= 0 Ω, C
L
= 10 nF;
Figure 17
OFF Isolation 72 dB typ R
L
= 75 Ω , C
L
= 5 pF, f = 1 MHz;
V
S
= 2.3 V rms, Figure 18
Channel-to-Channel Crosstalk 90 dB typ R
L
= 75 Ω, C
L
= 5 pF, f = 1 MHz;
V
S
= 2.3 V rms, Figure 19
C
S
(OFF) 13 pF typ
C
D
, C
S
(ON) 49 pF typ
POWER REQUIREMENTS
I
DD
0.05 mA typ Digital inputs = 0 V or 5 V
0.35 mA max
I
SS
0.01 µA typ
1 5 µA max
V
DD
/V
SS
±3/±20 V min/V max |V
DD
| = |V
SS
|
1
Temperature range is as follows: B version, −40°C to +85°C.
2
Guaranteed by design; not subject to production test.
ADG436
Rev. B | Page 4 of 12
SINGLE SUPPLY
1
V
DD
= 12 V, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25°C −40°C to +85°C Unit Test Conditions/ Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
R
ON
20 Ω typ V
D
= 1 V, 10 V, I
S
= −1 mA
40 Ω max
R
ON
Match 2.5 Ω max
LEAKAGE CURRENTS V
DD
= 13.2 V
Source OFF Leakage I
S
(OFF) ±0.005 nA typ V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V
±0.25 ±5 nA max Figure 13
Channel ON Leakage I
D
, I
S
(ON) ±0.05 nA typ V
S
= V
D
= 12.2 V/1 V
±4 ±5 nA max Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
±0.005 µA typ V
IN
= 0 V or V
DD
±0.5 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
100 ns typ R
L
= 300 Ω , C
L
= 35 pF;
200 ns max V
S
= 8 V; Figure 15
t
OFF
90 ns typ R
L
= 300 Ω , C
L
= 35 pF;
180 ns max V
S
= 8 V; Figure 15
Break-Before-Make Delay, t
OPEN
10 ns typ R
L
= 300 Ω , C
L
= 35 pF;
V
S
= 5 V; Figure 16
Charge Injection 10 pC typ V
D
= 6 V, R
D
= 0 Ω , C
L
= 10 nF; Figure 17
OFF Isolation 72 dB typ R
L
= 75 Ω , C
L
= 5 pF, f = 1 MHz;
V
S
= 1.15 V rms; Figure 18
Channel-to-Channel Crosstalk 90 dB typ R
L
= 75 Ω , C
L
= 5 pF, f = 1 MHz;
V
S
= 1.15 V rms, Figure 19
C
S
(OFF) 22 pF typ
C
D
, C
S
(ON) 46 pF typ
POWER REQUIREMENTS V
DD
= 13.5 V
I
DD
0.05 mA typ Digital inputs = 0 V or 5 V
0.35 mA max
V
DD
+3/+30 V min/V max
1
Temperature range is as follows: B version, −40°C to +85°C.
2
Guaranteed by design; not subject to production test.
ADG436
Rev. B | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to V
SS
+44 V
V
DD
to GND −0.3 V to +30 V
V
SS
to GND +0.3 V to −30 V
Analog, Digital Inputs
1
V
SS
− 2 V to V
DD
+ 2V or 20 mA,
whichever occurs first
Continuous Current, S or D 20 mA
Peak Current, S or D (pulsed at
1 ms, 10% Duty Cycle max)
40 mA
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Junction Temperature 150°C
θ
JA
, Thermal Impedance
PDIP Package 117°C/W
SOIC Package 77°C/W
Lead Temperature, Soldering
(10 sec)
260°C
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 4. Truth Table
Logic Switch A Switch B
0 Off On
1 On Off
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada-
tion or loss of functionality.
P1-P3P4-P6P7-P9P10-P12P13-P13

ADG436BNZ

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Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs LC2MOS+-15V Dual SPDT
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