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AMMC-5618-W50

P1-P3P4-P6P7-P8
1
AMMC - 5618
6 - 20 GHz Amplier
Data Sheet
Description
Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an
ecient two-stage amplier designed to be used as a
cascadable intermediate gain block for EW applications.
In communication systems, it can be used as a LO buer,
or as a transmit driver amplier. It is fabricated using a
PHEMT integrated circuit structure that provides excep-
tional eciency and at gain performance. During typi-
cal operation with a single 5-V supply, each gain stage is
biased for Class-A operation for optimal power output
with minimal distortion. The RF input and output have
matching circuitry for use in 50-W environments. The
backside of the chip is both RF and DC ground. This helps
simplify the assembly process and reduces assembly re-
lated performance variations and costs. For improved re-
liability and moisture protection, the die is passivated at
the active areas. The MMIC is a cost eective alternative
to hybrid (discrete FET) ampliers that require complex
tuning and assembly processes.
Applications
• Driver/Buer in microwave communication systems
• Cascadable gain stage for EW systems
• Phased array radar and transmit ampliers
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
Features
• Frequency Range: 6 - 20 GHz
• High Gain: 14.5 dB Typical
• Output Power: 19.5 dBm Typical
• Input and Output Return Loss: < -12 dB
• Flat Gain Response: ± 0.3 dB Typical
• Single Supply Bias: 5 V @ 107 mA
AMMC-5618 Absolute Maximum Ratings
[1]
Symbol Parameters/ Conditions Units Min. Max.
V
D1
, V
D2
Drain Supply Voltage V 7
V
G1
Optional Gate Voltage V -5 +1
V
G2
Optional Gate Voltage V -5 +1
I
D1
Drain Supply Current mA 70
I
D2
Drain Supply Current mA 84
P
in
RF Input Power dBm 20
T
ch
Channel Temp. °C +150
T
b
Operating Backside Temp. °C -55
T
stg
Storage Temp. °C -65 +165
T
max
Maximum Assembly Temp.
(60 sec max)
°C +300
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Chip Size: 920 x 920 µm (36.2 x 36.2 mils)
Chip Size Tolerance: ± 10µm (±0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
2
AMMC-5618 DC Specications / Physical Properties
[1]
Symbol Parameters and Test Conditions Unit Min. Typical Max.
V
D1
,V
D2
Recommended Drain Supply Voltage V 3 5 7
I
D1
First stage Drain Supply Current
(V
D1
= 5V, V
G1
= Open or Ground)
mA 48
I
D2
Second stage Drain Supply Current
(V
D2
= 5V, V
G2
= Open or Ground)
mA 59
I
D1
+ I
D2
Total Drain Supply Current
(V
G1
= V
G2
= Open or Ground, V
D1
= V
D2
= 5 V)
mA 107 140
θ
ch-b
Thermal Resistance
[2]
(Backside temperature (Tb) = 25°C
°C/W 22
Notes:
1. Backside temperature T
b
= 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θ
ch-b
) = 32°C/W at T
channel
(T
c
) = 150°C as measured using infrared microscopy.
Thermal Resistance at backside temperature (T
b
) = 25°C calculated from measured data.
AMMC-5618 RF Specications
[3, 5]
(T
b
= 25°C, V
DD
= 5 V, I
DD
= 107 mA, Z
0
= 50 Ω)
Symbol Parameters and Test Conditions Unit Min. Typical Max.
|S
21
|
2
Small-signal Gain dB 12.5 14.5
D|S
21
|
2
Small-signal Gain Flatness dB ± 0.3
RL
in
Input Return Loss dB 9 12
RL
out
Output Return Loss dB 9 12
|S
12
|
2
Isolation dB 40 45
P
-1dB
Output Power at 1dB Gain Compression @ 20 GHz dBm 17.5 19.5
P
sat
Saturated Output Power (3dB Gain Compression) @ 20 GHz dBm 20.5
OIP3 Output 3rd Order Intercept Point @ 20 GHz dBm 26
DS
21
/ DT Temperature Coecient of Gain
[4]
dB/°C -0.023
NF Noise Figure @ 20 GHz dB 4.4 6.5
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
4. Temperature Coecient of Gain based on sample test
5. All tested parameters guaranteed with measurement accuracy ±1.5dB for S12, ±1dB for S11, S21, S22, P1dB and ±0.5dB for NF.
3
AMMC-5618 Typical Performance (T
chuck
=25°C, V
DD
=5V, I
DD
= 107 mA, Z
o
=50Ω)
AMMC-5618 Typical Performance vs. Supply Voltage (T
b
=25°C, Z
o
=50Ω)
Figure 1. Gain
Figure 2. Isolation Figure 3. Input Return Loss
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6. output Power at 1 dB Gain
Compression
Figure 7. Gain and Voltage Figure 8. Isolation and Voltage Figure 9. Input Return Loss and Voltage
FREQUENCY (GHz)
GAIN (dB)
4 7 10 13 16 19 22
18
15
12
9
6
3
0
FREQUENCY (GHz)
ISOLATION (dB)
4 7 10 13 16 19 22
0
-10
-20
-30
-40
-50
-60
-70
FREQUENCY (GHz)
INPUT RL (dB)
4 7 10 13 16 19 22
0
-5
-10
-15
-20
-25
FREQUENCY (GHz)
OUTPUT RL (dB)
4 7 10 13 16 19 22
0
-5
-10
-15
-20
-25
-30
FREQUENCY (GHz)
NF (dB)
4 7 10 13 16 19 22
10
8
6
4
2
0
FREQUENCY (GHz)
P1dB (dBm)
4 7 10 13 16 19 22
24
20
16
12
8
4
0
FREQUENCY (GHz)
GAIN (dB)
4 7 10 13 16 19 22
18
15
12
9
6
3
0
Vdd=4V
Vdd=5V
Vdd=6V
FREQUENCY (GHz)
ISOLATION (dB)
4 7 10 13 16 19 22
0
-10
-20
-30
-40
-50
-60
Vdd=4V
Vdd=5V
Vdd=6V
FREQUENCY (GHz)
INPUT RL (dB)
4 7 10 13 16 19 22
0
-5
-10
-15
-20
-25
-30
Vdd=4V
Vdd=5V
Vdd=6V
P1-P3P4-P6P7-P8

AMMC-5618-W50

Mfr. #:
Buy AMMC-5618-W50
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amp GaAs MMIC
Lifecycle:
New from this manufacturer.
Delivery:
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